BC849CLT1G
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onsemi BC849CLT1G

Manufacturer No:
BC849CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi BC849CLT1G is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for a wide range of applications. This transistor is part of the BC series, known for its reliability and versatility. It is packaged in a SOT-23 (SC-59, TO-236) surface mount package, making it suitable for modern electronic designs where space is a constraint. The BC849CLT1G is RoHS compliant, Pb-free, and halogen-free, aligning with current environmental standards.

Key Specifications

Attribute Value Unit
Polarity NPN
Collector-Emitter Voltage (Max) 30 V
Collector-Base Voltage (Max) 30 V
Emitter-Base Voltage (Max) 5.0 V
Collector Current (Max) 100 mA
Power Dissipation (Total) 225 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
DC Current Gain (hFE) 110-520
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25-0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7-0.9 V

Key Features

  • General Purpose Transistor: Suitable for a wide range of applications including amplifiers, switches, and voltage regulators.
  • High DC Current Gain (hFE): Ranges from 110 to 520, ensuring high amplification capabilities.
  • Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are low, reducing power losses.
  • Surface Mount Package: SOT-23 package is compact and ideal for surface mount technology (SMT) assembly.
  • Environmental Compliance: RoHS compliant, Pb-free, and halogen-free, meeting current environmental standards.
  • ESD Rating: High ESD rating (> 4000 V Human Body Model, > 400 V Machine Model) for robustness against electrostatic discharge.

Applications

  • Amplifiers and Switches: Used in various amplifier and switching circuits due to its high current gain and low saturation voltages.
  • Voltage Regulators: Can be used in voltage regulator circuits to stabilize output voltages.
  • Automotive and Industrial Electronics: Suitable for use in automotive and industrial applications requiring robust and reliable components.
  • Consumer Electronics: Found in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BC849CLT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  2. What is the package style of the BC849CLT1G transistor?

    The package style is SOT-23 (SC-59, TO-236).

  3. What is the maximum collector current of the BC849CLT1G transistor?

    The maximum collector current (IC) is 100 mA.

  4. Is the BC849CLT1G transistor RoHS compliant?

    Yes, the BC849CLT1G is RoHS compliant, Pb-free, and halogen-free.

  5. What is the typical DC current gain (hFE) of the BC849CLT1G transistor?

    The typical DC current gain (hFE) ranges from 110 to 520.

  6. What are the saturation voltages of the BC849CLT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25-0.6 V, and the base-emitter saturation voltage (VBE(sat)) is 0.7-0.9 V.

  7. What is the ESD rating of the BC849CLT1G transistor?

    The ESD rating is > 4000 V Human Body Model and > 400 V Machine Model.

  8. What are common applications of the BC849CLT1G transistor?

    Common applications include amplifiers, switches, voltage regulators, automotive electronics, and consumer electronics.

  9. What is the power dissipation of the BC849CLT1G transistor?

    The total power dissipation is 225 mW.

  10. Is the BC849CLT1G transistor suitable for high-temperature applications?

    The transistor can operate over a temperature range of -55°C to +125°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC849CLT1G BC848CLT1G BC849BLT1G BC849CLT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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