BC849CLT1G
  • Share:

onsemi BC849CLT1G

Manufacturer No:
BC849CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi BC849CLT1G is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for a wide range of applications. This transistor is part of the BC series, known for its reliability and versatility. It is packaged in a SOT-23 (SC-59, TO-236) surface mount package, making it suitable for modern electronic designs where space is a constraint. The BC849CLT1G is RoHS compliant, Pb-free, and halogen-free, aligning with current environmental standards.

Key Specifications

Attribute Value Unit
Polarity NPN
Collector-Emitter Voltage (Max) 30 V
Collector-Base Voltage (Max) 30 V
Emitter-Base Voltage (Max) 5.0 V
Collector Current (Max) 100 mA
Power Dissipation (Total) 225 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
DC Current Gain (hFE) 110-520
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25-0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7-0.9 V

Key Features

  • General Purpose Transistor: Suitable for a wide range of applications including amplifiers, switches, and voltage regulators.
  • High DC Current Gain (hFE): Ranges from 110 to 520, ensuring high amplification capabilities.
  • Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are low, reducing power losses.
  • Surface Mount Package: SOT-23 package is compact and ideal for surface mount technology (SMT) assembly.
  • Environmental Compliance: RoHS compliant, Pb-free, and halogen-free, meeting current environmental standards.
  • ESD Rating: High ESD rating (> 4000 V Human Body Model, > 400 V Machine Model) for robustness against electrostatic discharge.

Applications

  • Amplifiers and Switches: Used in various amplifier and switching circuits due to its high current gain and low saturation voltages.
  • Voltage Regulators: Can be used in voltage regulator circuits to stabilize output voltages.
  • Automotive and Industrial Electronics: Suitable for use in automotive and industrial applications requiring robust and reliable components.
  • Consumer Electronics: Found in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BC849CLT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  2. What is the package style of the BC849CLT1G transistor?

    The package style is SOT-23 (SC-59, TO-236).

  3. What is the maximum collector current of the BC849CLT1G transistor?

    The maximum collector current (IC) is 100 mA.

  4. Is the BC849CLT1G transistor RoHS compliant?

    Yes, the BC849CLT1G is RoHS compliant, Pb-free, and halogen-free.

  5. What is the typical DC current gain (hFE) of the BC849CLT1G transistor?

    The typical DC current gain (hFE) ranges from 110 to 520.

  6. What are the saturation voltages of the BC849CLT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25-0.6 V, and the base-emitter saturation voltage (VBE(sat)) is 0.7-0.9 V.

  7. What is the ESD rating of the BC849CLT1G transistor?

    The ESD rating is > 4000 V Human Body Model and > 400 V Machine Model.

  8. What are common applications of the BC849CLT1G transistor?

    Common applications include amplifiers, switches, voltage regulators, automotive electronics, and consumer electronics.

  9. What is the power dissipation of the BC849CLT1G transistor?

    The total power dissipation is 225 mW.

  10. Is the BC849CLT1G transistor suitable for high-temperature applications?

    The transistor can operate over a temperature range of -55°C to +125°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.16
1,950

Please send RFQ , we will respond immediately.

Same Series
BC847BLT3G
BC847BLT3G
TRANS NPN 45V 0.1A SOT23-3
BC850CLT1G
BC850CLT1G
TRANS NPN 45V 0.1A SOT23-3
BC846BLT1G
BC846BLT1G
TRANS NPN 65V 0.1A SOT23-3
SBC846ALT1G
SBC846ALT1G
TRANS NPN 65V 0.1A SOT23-3
NSVBC850BLT1G
NSVBC850BLT1G
TRANS NPN 45V 0.1A SOT23-3
BC848BLT1G
BC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
BC846ALT3G
BC846ALT3G
TRANS NPN 65V 0.1A SOT23-3
BC848CLT1G
BC848CLT1G
TRANS NPN 30V 0.1A SOT23-3
BC849CLT1G
BC849CLT1G
TRANS NPN 30V 0.1A SOT23-3
SBC848BLT1G
SBC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
BC847ALT1
BC847ALT1
TRANS NPN 45V 100MA SOT23
BC848BLT1
BC848BLT1
TRANS NPN 30V 100MA SOT23

Similar Products

Part Number BC849CLT1G BC848CLT1G BC849BLT1G BC849CLT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4