BC849BLT1G
  • Share:

onsemi BC849BLT1G

Manufacturer No:
BC849BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC849BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC846ALT1G series and is known for its high current gain and low noise characteristics, making it suitable for a wide range of applications. The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package and is available in tape and reel form, facilitating easy integration into various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 100 mAdc
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V
Collector-Base Breakdown Voltage V(BR)CBO 30 V
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 V
DC Current Gain (hFE) hFE 180 - 290 -
Collector-Emitter Saturation Voltage VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) 0.7 - 0.9 V
Current-Gain Bandwidth Product fT 100 MHz
Output Capacitance Cobo 4.5 pF

Key Features

  • High Current Gain: The BC849BLT1G offers a high DC current gain (hFE) ranging from 180 to 290, making it suitable for amplification and switching applications.
  • Low Noise Characteristics: This transistor has a low noise figure, which is beneficial in audio and other low-noise applications.
  • ESD Protection: The device has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model, ensuring robustness against electrostatic discharge.
  • Automotive and Industrial Compliance: The BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Environmental Compliance: The transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, aligning with environmental regulations.

Applications

  • General-Purpose Amplification: Suitable for general-purpose amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems.
  • Industrial Control Systems: Robust ESD protection and compliance with industrial standards make it a reliable choice for industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC849BLT1G?

    The collector-emitter voltage rating (VCEO) of the BC849BLT1G is 30 Vdc.

  2. What is the typical DC current gain (hFE) of the BC849BLT1G?

    The typical DC current gain (hFE) of the BC849BLT1G ranges from 180 to 290.

  3. Is the BC849BLT1G ESD protected?

    Yes, the BC849BLT1G has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model.

  4. What is the package type of the BC849BLT1G?

    The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package.

  5. Is the BC849BLT1G RoHS compliant?

    Yes, the BC849BLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What are the typical applications of the BC849BLT1G?

    The BC849BLT1G is suitable for general-purpose amplification, switching circuits, automotive electronics, and industrial control systems.

  7. What is the collector current rating of the BC849BLT1G?

    The continuous collector current rating (IC) of the BC849BLT1G is 100 mA.

  8. What is the base-emitter saturation voltage of the BC849BLT1G?

    The base-emitter saturation voltage (VBE(sat)) of the BC849BLT1G is typically between 0.7 and 0.9 V.

  9. What is the current-gain bandwidth product of the BC849BLT1G?

    The current-gain bandwidth product (fT) of the BC849BLT1G is 100 MHz.

  10. Is the BC849BLT1G suitable for automotive applications?

    Yes, the BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.22
4,080

Please send RFQ , we will respond immediately.

Same Series
BC849BLT1G
BC849BLT1G
TRANS NPN 30V 0.1A SOT23-3
SBC847CLT1G
SBC847CLT1G
TRANS NPN 45V 0.1A SOT23-3
SBC846ALT1G
SBC846ALT1G
TRANS NPN 65V 0.1A SOT23-3
NSVBC847BLT3G
NSVBC847BLT3G
TRANS NPN 45V 0.1A SOT23-3
NSVBC850BLT1G
NSVBC850BLT1G
TRANS NPN 45V 0.1A SOT23-3
BC850BLT1G
BC850BLT1G
TRANS NPN 45V 0.1A SOT23-3
BC848BLT1G
BC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
BC848BLT3G
BC848BLT3G
TRANS NPN 30V 0.1A SOT23-3
SBC848BLT1G
SBC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
SBC846BLT1G
SBC846BLT1G
TRANS NPN 65V 0.1A SOT23-3
BC847ALT1
BC847ALT1
TRANS NPN 45V 100MA SOT23
BC848CLT1
BC848CLT1
TRANS NPN 30V 100MA SOT23

Similar Products

Part Number BC849BLT1G BC849CLT1G BC849BLT3G BC848BLT1G BC849BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BCX53-TP
BCX53-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT89
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER