BC849BLT1G
  • Share:

onsemi BC849BLT1G

Manufacturer No:
BC849BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC849BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC846ALT1G series and is known for its high current gain and low noise characteristics, making it suitable for a wide range of applications. The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package and is available in tape and reel form, facilitating easy integration into various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 100 mAdc
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V
Collector-Base Breakdown Voltage V(BR)CBO 30 V
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 V
DC Current Gain (hFE) hFE 180 - 290 -
Collector-Emitter Saturation Voltage VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) 0.7 - 0.9 V
Current-Gain Bandwidth Product fT 100 MHz
Output Capacitance Cobo 4.5 pF

Key Features

  • High Current Gain: The BC849BLT1G offers a high DC current gain (hFE) ranging from 180 to 290, making it suitable for amplification and switching applications.
  • Low Noise Characteristics: This transistor has a low noise figure, which is beneficial in audio and other low-noise applications.
  • ESD Protection: The device has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model, ensuring robustness against electrostatic discharge.
  • Automotive and Industrial Compliance: The BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Environmental Compliance: The transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, aligning with environmental regulations.

Applications

  • General-Purpose Amplification: Suitable for general-purpose amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems.
  • Industrial Control Systems: Robust ESD protection and compliance with industrial standards make it a reliable choice for industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC849BLT1G?

    The collector-emitter voltage rating (VCEO) of the BC849BLT1G is 30 Vdc.

  2. What is the typical DC current gain (hFE) of the BC849BLT1G?

    The typical DC current gain (hFE) of the BC849BLT1G ranges from 180 to 290.

  3. Is the BC849BLT1G ESD protected?

    Yes, the BC849BLT1G has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model.

  4. What is the package type of the BC849BLT1G?

    The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package.

  5. Is the BC849BLT1G RoHS compliant?

    Yes, the BC849BLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What are the typical applications of the BC849BLT1G?

    The BC849BLT1G is suitable for general-purpose amplification, switching circuits, automotive electronics, and industrial control systems.

  7. What is the collector current rating of the BC849BLT1G?

    The continuous collector current rating (IC) of the BC849BLT1G is 100 mA.

  8. What is the base-emitter saturation voltage of the BC849BLT1G?

    The base-emitter saturation voltage (VBE(sat)) of the BC849BLT1G is typically between 0.7 and 0.9 V.

  9. What is the current-gain bandwidth product of the BC849BLT1G?

    The current-gain bandwidth product (fT) of the BC849BLT1G is 100 MHz.

  10. Is the BC849BLT1G suitable for automotive applications?

    Yes, the BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.22
4,080

Please send RFQ , we will respond immediately.

Same Series
BC847BLT3G
BC847BLT3G
TRANS NPN 45V 0.1A SOT23-3
BC847ALT1G
BC847ALT1G
TRANS NPN 45V 0.1A SOT23-3
SBC846ALT1G
SBC846ALT1G
TRANS NPN 65V 0.1A SOT23-3
BC848BLT1G
BC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
BC847CLT3G
BC847CLT3G
TRANS NPN 45V 0.1A SOT23-3
BC846BLT3G
BC846BLT3G
TRANS NPN 65V 0.1A SOT23-3
BC847CLT1G
BC847CLT1G
TRANS NPN 45V 0.1A SOT23-3
BC848CLT1G
BC848CLT1G
TRANS NPN 30V 0.1A SOT23-3
BC849CLT1G
BC849CLT1G
TRANS NPN 30V 0.1A SOT23-3
SBC848BLT1G
SBC848BLT1G
TRANS NPN 30V 0.1A SOT23-3
NSVBC850CLT1G
NSVBC850CLT1G
TRANS NPN 45V 0.1A SOT23-3
BC848BLT1
BC848BLT1
TRANS NPN 30V 100MA SOT23

Similar Products

Part Number BC849BLT1G BC849CLT1G BC849BLT3G BC848BLT1G BC849BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN