BC849BLT1G
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onsemi BC849BLT1G

Manufacturer No:
BC849BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC849BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC846ALT1G series and is known for its high current gain and low noise characteristics, making it suitable for a wide range of applications. The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package and is available in tape and reel form, facilitating easy integration into various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 100 mAdc
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V
Collector-Base Breakdown Voltage V(BR)CBO 30 V
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 V
DC Current Gain (hFE) hFE 180 - 290 -
Collector-Emitter Saturation Voltage VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) 0.7 - 0.9 V
Current-Gain Bandwidth Product fT 100 MHz
Output Capacitance Cobo 4.5 pF

Key Features

  • High Current Gain: The BC849BLT1G offers a high DC current gain (hFE) ranging from 180 to 290, making it suitable for amplification and switching applications.
  • Low Noise Characteristics: This transistor has a low noise figure, which is beneficial in audio and other low-noise applications.
  • ESD Protection: The device has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model, ensuring robustness against electrostatic discharge.
  • Automotive and Industrial Compliance: The BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Environmental Compliance: The transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, aligning with environmental regulations.

Applications

  • General-Purpose Amplification: Suitable for general-purpose amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems.
  • Industrial Control Systems: Robust ESD protection and compliance with industrial standards make it a reliable choice for industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC849BLT1G?

    The collector-emitter voltage rating (VCEO) of the BC849BLT1G is 30 Vdc.

  2. What is the typical DC current gain (hFE) of the BC849BLT1G?

    The typical DC current gain (hFE) of the BC849BLT1G ranges from 180 to 290.

  3. Is the BC849BLT1G ESD protected?

    Yes, the BC849BLT1G has high ESD ratings, with > 4000 V for the Human Body Model and > 400 V for the Machine Model.

  4. What is the package type of the BC849BLT1G?

    The BC849BLT1G is packaged in a SOT-23 (Pb-Free) package.

  5. Is the BC849BLT1G RoHS compliant?

    Yes, the BC849BLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What are the typical applications of the BC849BLT1G?

    The BC849BLT1G is suitable for general-purpose amplification, switching circuits, automotive electronics, and industrial control systems.

  7. What is the collector current rating of the BC849BLT1G?

    The continuous collector current rating (IC) of the BC849BLT1G is 100 mA.

  8. What is the base-emitter saturation voltage of the BC849BLT1G?

    The base-emitter saturation voltage (VBE(sat)) of the BC849BLT1G is typically between 0.7 and 0.9 V.

  9. What is the current-gain bandwidth product of the BC849BLT1G?

    The current-gain bandwidth product (fT) of the BC849BLT1G is 100 MHz.

  10. Is the BC849BLT1G suitable for automotive applications?

    Yes, the BC849BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC849BLT1G BC849CLT1G BC849BLT3G BC848BLT1G BC849BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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