NSVBC848CLT1G
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onsemi NSVBC848CLT1G

Manufacturer No:
NSVBC848CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBC848CLT1G is a general-purpose NPN silicon transistor produced by onsemi. This transistor is part of the BC848 series and is designed for a wide range of applications requiring reliable and efficient performance. It is packaged in a SOT-23 (Pb-Free) package, making it suitable for surface-mount technology (SMT) assembly. The NSVBC848CLT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 30 Vdc
Collector-Base Voltage (Vcb) 30 Vdc
Emitter-Base Voltage (Veb) 5.0 Vdc
Collector Current (Ic) 0.1 A
Maximum Collector Power Dissipation (Pc) 0.225 W
Transition Frequency (ft) 100 MHz
Collector Capacitance (Cc) 4.5 pF
Forward Current Transfer Ratio (hFE), MIN 420
Maximum Operating Junction Temperature (Tj) 150 °C

Key Features

  • Moisture Sensitivity Level: 1
  • ESD Rating - Human Body Model: > 4000 V, Machine Model: > 400 V
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant
  • High DC current gain (hFE) with a minimum value of 420
  • Low collector-emitter saturation voltage (Vce(sat)) and base-emitter saturation voltage (Vbe(sat))
  • High transition frequency (ft) of 100 MHz

Applications

  • General-purpose amplifiers and switches
  • Automotive systems requiring AEC-Q101 qualification
  • Industrial control and automation
  • Consumer electronics requiring high reliability and efficiency
  • Audio and video equipment

Q & A

  1. What is the maximum collector-emitter voltage of the NSVBC848CLT1G transistor?

    The maximum collector-emitter voltage (Vce) is 30 Vdc.

  2. What is the maximum collector current of the NSVBC848CLT1G transistor?

    The maximum collector current (Ic) is 0.1 A.

  3. Is the NSVBC848CLT1G transistor RoHS compliant?

    Yes, the NSVBC848CLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the transition frequency (ft) of the NSVBC848CLT1G transistor?

    The transition frequency (ft) is 100 MHz.

  5. What is the minimum forward current transfer ratio (hFE) of the NSVBC848CLT1G transistor?

    The minimum forward current transfer ratio (hFE) is 420.

  6. What is the maximum operating junction temperature (Tj) of the NSVBC848CLT1G transistor?

    The maximum operating junction temperature (Tj) is 150 °C.

  7. Is the NSVBC848CLT1G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.

  8. What package type is the NSVBC848CLT1G transistor available in?

    The NSVBC848CLT1G is available in a SOT-23 (Pb-Free) package.

  9. What is the collector capacitance (Cc) of the NSVBC848CLT1G transistor?

    The collector capacitance (Cc) is 4.5 pF.

  10. Does the NSVBC848CLT1G transistor have any specific ESD ratings?

    Yes, it has an ESD rating of > 4000 V for the Human Body Model and > 400 V for the Machine Model.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number NSVBC848CLT1G NSVBC858CLT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 225 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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