BC848CLT1G
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onsemi BC848CLT1G

Manufacturer No:
BC848CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848CLT1G is a general-purpose NPN transistor manufactured by onsemi. This transistor is part of the BC846/BC847/BC848/BC849 series, known for their high current gain and low noise characteristics. The BC848CLT1G is designed for a wide range of applications, including amplifiers, switches, and other general-purpose electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Configuration - Single -
Maximum DC Collector Current IC 100 mA
Collector-Emitter Voltage (VCEO Max) VCEO 30 V
Collector-Base Voltage (VCBO) VCBO 30 V
Emitter-Base Voltage (VEBO) VEBO 5.0 V
Collector Cutoff Current (ICBO) ICBO 15 nA (VCB = 30 V, TA = 150°C) -
DC Current Gain (hFE) hFE 110 - 520 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) 0.25 - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) 0.7 - 0.9 V
Current-Gain Bandwidth Product (fT) fT 100 MHz
Output Capacitance (Cobo) Cobo 4.5 pF
ESD Rating - Human Body Model - > 4000 V -
ESD Rating - Machine Model - > 400 V -

Key Features

  • High Current Gain: The BC848CLT1G offers a high DC current gain (hFE) ranging from 110 to 520, making it suitable for amplification and switching applications.
  • Low Noise Characteristics: This transistor has a low noise figure, which is beneficial for applications requiring minimal noise interference.
  • High ESD Rating: The transistor has high ESD ratings, both in the Human Body Model (> 4000 V) and Machine Model (> 400 V), ensuring robustness against electrostatic discharge.
  • Automotive and Industrial Compliance: The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Environmental Compliance: The BC848CLT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.

Applications

  • Amplifiers: Suitable for use in various amplifier circuits due to its high current gain and low noise characteristics.
  • Switches: Can be used as a switch in digital circuits, leveraging its high current handling and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems.
  • General-Purpose Electronic Circuits: Applicable in a wide range of general-purpose electronic circuits requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum DC collector current of the BC848CLT1G?

    The maximum DC collector current is 100 mA.

  2. What is the collector-emitter voltage (VCEO) rating of the BC848CLT1G?

    The collector-emitter voltage (VCEO) rating is 30 V.

  3. What is the ESD rating of the BC848CLT1G in the Human Body Model?

    The ESD rating in the Human Body Model is greater than 4000 V.

  4. Is the BC848CLT1G RoHS compliant?

    Yes, the BC848CLT1G is RoHS compliant, Pb-free, and halogen-free/BFR-free.

  5. What is the typical DC current gain (hFE) of the BC848CLT1G?

    The typical DC current gain (hFE) ranges from 110 to 520.

  6. What are some common applications of the BC848CLT1G?

    Common applications include amplifiers, switches, automotive electronics, and general-purpose electronic circuits.

  7. What is the collector-emitter saturation voltage (VCE(sat)) of the BC848CLT1G?

    The collector-emitter saturation voltage (VCE(sat)) ranges from 0.25 to 0.6 V.

  8. What is the base-emitter saturation voltage (VBE(sat)) of the BC848CLT1G?

    The base-emitter saturation voltage (VBE(sat)) ranges from 0.7 to 0.9 V.

  9. What is the current-gain bandwidth product (fT) of the BC848CLT1G?

    The current-gain bandwidth product (fT) is 100 MHz.

  10. Is the BC848CLT1G suitable for automotive applications?

    Yes, the BC848CLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC848CLT1G BC849CLT1G BC848CWT1G BC848CLT3G BC848ALT1G BC848BLT1G BC848CLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN NPN NPN -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V -
Power - Max 300 mW 300 mW 150 mW 225 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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