Overview
The BC849BLT1 is a general-purpose NPN silicon transistor manufactured by onsemi. It is part of the BC849 series, known for its high current gain and low noise characteristics, making it suitable for a wide range of electronic applications. The transistor is packaged in a SOT-23 (TO-236AB) case, which is compact and ideal for surface-mount technology (SMT) assembly.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | - | - | V |
| Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) | V(BR)CES | 50 | - | - | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5.0 | - | - | V |
| Collector Cutoff Current (VCB = 30 V) | ICBO | - | - | 15 nA | A |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 V | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 V | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 MHz | - |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 pF | - |
Key Features
- High DC current gain (hFE) with a range of 110 to 420 at IC = 10 mA and VCE = 5.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V at IC = 10 mA and IB = 0.5 mA.
- Low base-emitter saturation voltage (VBE(sat)) of 0.7 V at IC = 10 mA and IB = 0.5 mA.
- High current-gain bandwidth product (fT) of 100 MHz.
- Compact SOT-23 (TO-236AB) package suitable for surface-mount technology (SMT).
- Low noise figure, making it suitable for low-noise applications.
Applications
- General-purpose amplification and switching in electronic circuits.
- Low-noise amplifiers and pre-amplifiers.
- Audio and video circuits requiring high gain and low noise.
- Automotive and industrial control systems.
- Surface-mount technology (SMT) applications where space is limited.
Q & A
- What is the package type of the BC849BLT1 transistor?
The BC849BLT1 transistor is packaged in a SOT-23 (TO-236AB) case.
- What is the typical DC current gain (hFE) of the BC849BLT1 transistor?
The typical DC current gain (hFE) is 200 at IC = 10 mA and VCE = 5.0 V.
- What is the collector-emitter breakdown voltage (V(BR)CEO) of the BC849BLT1 transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is 30 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC849BLT1 transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V at IC = 10 mA and IB = 0.5 mA.
- What is the current-gain bandwidth product (fT) of the BC849BLT1 transistor?
The current-gain bandwidth product (fT) is 100 MHz.
- What are the typical applications of the BC849BLT1 transistor?
The BC849BLT1 transistor is used in general-purpose amplification, low-noise amplifiers, audio and video circuits, automotive and industrial control systems, and surface-mount technology (SMT) applications.
- What is the output capacitance (Cobo) of the BC849BLT1 transistor?
The output capacitance (Cobo) is 4.5 pF at VCB = 10 V and f = 1.0 MHz.
- What is the emitter-base breakdown voltage (V(BR)EBO) of the BC849BLT1 transistor?
The emitter-base breakdown voltage (V(BR)EBO) is 5.0 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the BC849BLT1 transistor?
The base-emitter saturation voltage (VBE(sat)) is 0.7 V at IC = 10 mA and IB = 0.5 mA.
- Is the BC849BLT1 transistor suitable for high-temperature applications?
The transistor can operate over a temperature range from -55°C to 150°C, making it suitable for various environmental conditions.
