Overview
The BC846AWT1G is a general-purpose PNP transistor manufactured by onsemi. It is part of the BC846, BC847, and BC848 series, known for their versatility and reliability in various electronic applications. This transistor is packaged in a SC-70 (SOT-323) case, making it suitable for surface mount technology (SMT) and compact designs.
The BC846AWT1G is designed to operate over a wide temperature range from -55°C to 150°C, ensuring stability and performance in diverse environmental conditions. It is widely used in amplifier, switch, and other general-purpose applications where high current gain and low noise are required.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | - | - | 65 | V |
| Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) | V(BR)CES | - | - | 80 | V |
| Collector-Base Breakdown Voltage (IC = 10 μA) | V(BR)CBO | - | - | 80 | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 μA) | V(BR)EBO | - | - | 6.0 | V |
| Collector Cutoff Current (VCB = 30 V) | ICBO | - | - | 15 nA | |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 | 200 | 420 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Base-Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | 580 | 660 | 700 | mV |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 MHz | |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 pF | |
| Operating Temperature | TJ | -55°C | - | 150°C |
Key Features
- High Current Gain: The BC846AWT1G offers a high DC current gain (hFE) ranging from 110 to 420, making it suitable for amplifier applications.
- Low Noise: It has a low noise figure, which is beneficial in audio and other low-noise applications.
- Wide Operating Temperature Range: The transistor can operate from -55°C to 150°C, ensuring reliability in various environmental conditions.
- Compact Package: The SC-70 (SOT-323) package is ideal for surface mount technology, allowing for compact and efficient board design.
- High Breakdown Voltages: The transistor features high collector-emitter, collector-base, and emitter-base breakdown voltages, providing robustness against voltage spikes.
Applications
- Amplifiers: The BC846AWT1G is commonly used in amplifier circuits due to its high current gain and low noise characteristics.
- Switching Circuits: It can be used in switching applications where low saturation voltage and high current gain are required.
- Audio Circuits: The low noise figure makes it suitable for use in audio amplifiers and other audio-related circuits.
- General-Purpose Electronics: It is versatile and can be used in a variety of general-purpose electronic circuits where a reliable PNP transistor is needed.
Q & A
- What is the package type of the BC846AWT1G transistor?
The BC846AWT1G transistor is packaged in a SC-70 (SOT-323) case, suitable for surface mount technology.
- What is the operating temperature range of the BC846AWT1G?
The operating temperature range is from -55°C to 150°C.
- What are the typical values for the DC current gain (hFE) of the BC846AWT1G?
The DC current gain (hFE) typically ranges from 110 to 420.
- What is the collector-emitter breakdown voltage (V(BR)CEO) of the BC846AWT1G?
The collector-emitter breakdown voltage (V(BR)CEO) is up to 65 V.
- What is the output capacitance (Cobo) of the BC846AWT1G?
The output capacitance (Cobo) is up to 4.5 pF.
- What are some common applications of the BC846AWT1G transistor?
Common applications include amplifiers, switching circuits, audio circuits, and general-purpose electronics.
- What is the base-emitter on voltage (VBE(on)) of the BC846AWT1G?
The base-emitter on voltage (VBE(on)) typically ranges from 580 to 700 mV.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC846AWT1G?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.25 V.
- Is the BC846AWT1G suitable for high-frequency applications?
Yes, it has a current-gain bandwidth product (fT) of up to 100 MHz, making it suitable for high-frequency applications.
- What is the emitter-base breakdown voltage (V(BR)EBO) of the BC846AWT1G?
The emitter-base breakdown voltage (V(BR)EBO) is up to 6.0 V.
