Overview
The SBC846BWT1G is a general-purpose NPN silicon transistor produced by onsemi. It is part of the BC846, BC847, and BC848 series, designed for low power surface mount applications. This transistor is housed in the SC−70/SOT−323 package, making it suitable for various amplifier and switching applications. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 65 | V |
| Collector-Base Voltage | VCBO | 80 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 200 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 620 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | hFE | 110 - 200 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 - 0.9 | V |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Low power surface mount design in SC−70/SOT−323 package.
- High DC current gain (hFE) with a range of 110 to 200 at IC = 2.0 mA and VCE = 5.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain-bandwidth product (fT) of 100 MHz.
Applications
The SBC846BWT1G transistor is designed for general-purpose amplifier applications, including but not limited to:
- Audio amplifiers
- Switching circuits
- Low power DC-DC converters
- Automotive electronics
- Consumer electronics
Q & A
- What is the collector-emitter voltage rating of the SBC846BWT1G transistor?
The collector-emitter voltage (VCEO) rating is 65 V. - What is the maximum continuous collector current for this transistor?
The maximum continuous collector current (IC) is 100 mA. - Is the SBC846BWT1G transistor RoHS compliant?
Yes, the transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the thermal resistance, junction-to-ambient (RJA) for this transistor?
The thermal resistance, junction-to-ambient (RJA) is 620 °C/W. - What is the typical DC current gain (hFE) of the SBC846BWT1G transistor?
The typical DC current gain (hFE) ranges from 110 to 200 at IC = 2.0 mA and VCE = 5.0 V. - What is the output capacitance of the transistor?
The output capacitance (Cobo) is 4.5 pF at VCB = 10 V and f = 1.0 MHz. - What are the typical applications of the SBC846BWT1G transistor?
It is used in general-purpose amplifier applications, including audio amplifiers, switching circuits, low power DC-DC converters, automotive electronics, and consumer electronics. - Is the SBC846BWT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. - What is the package type of the SBC846BWT1G transistor?
The transistor is housed in the SC−70/SOT−323 package. - What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55 to +150 °C.
