Overview
The SBC847BWT1G is a general-purpose NPN silicon transistor produced by onsemi. It is part of the BC847 series, which is designed for low-power surface mount applications. This transistor is housed in the SC−70/SOT−323 package, making it suitable for a variety of electronic circuits. The SBC847BWT1G is AEC−Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 200 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 620 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | hFE | 150 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 | V |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
Key Features
- AEC−Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Housed in the SC−70/SOT−323 package, ideal for low-power surface mount applications.
- High DC current gain (hFE) with values up to 150 for the BC847B series.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Wide operating temperature range from −55°C to +150°C.
Applications
- General-purpose amplifier applications.
- Automotive electronics due to its AEC−Q101 qualification.
- Low-power surface mount circuits.
- Switching and linear amplifier circuits.
- Consumer electronics requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter voltage (VCEO) of the SBC847BWT1G transistor?
The collector-emitter voltage (VCEO) of the SBC847BWT1G transistor is 45 V.
- What is the package type of the SBC847BWT1G transistor?
The SBC847BWT1G transistor is housed in the SC−70/SOT−323 package.
- Is the SBC847BWT1G transistor RoHS compliant?
- What is the DC current gain (hFE) of the SBC847BWT1G transistor?
The DC current gain (hFE) of the SBC847BWT1G transistor is up to 150 for IC = 2.0 mA and VCE = 5.0 V.
- What are the typical applications of the SBC847BWT1G transistor?
The SBC847BWT1G transistor is used in general-purpose amplifier applications, automotive electronics, low-power surface mount circuits, and consumer electronics.
- What is the thermal resistance, junction-to-ambient (RJA) of the SBC847BWT1G transistor?
The thermal resistance, junction-to-ambient (RJA) of the SBC847BWT1G transistor is 620 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC847BWT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) of the SBC847BWT1G transistor is 0.25 V for IC = 10 mA and IB = 0.5 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the SBC847BWT1G transistor?
The base-emitter saturation voltage (VBE(sat)) of the SBC847BWT1G transistor is 0.7 V for IC = 10 mA and IB = 0.5 mA.
- What is the current-gain - bandwidth product (fT) of the SBC847BWT1G transistor?
The current-gain - bandwidth product (fT) of the SBC847BWT1G transistor is 100 MHz for IC = 10 mA, VCE = 5.0 Vdc, and f = 100 MHz.
- What is the operating temperature range of the SBC847BWT1G transistor?
The operating temperature range of the SBC847BWT1G transistor is from −55°C to +150°C.
