Overview
The BC847CWT3G is an NPN bipolar transistor designed for general-purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-323/SC-70 package, which is suitable for low-power surface mount applications. This transistor is part of the BC847 series, known for its reliability and versatility in various electronic circuits.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (VEB = 0) | V(BR)CES | - | - | 50 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6.0 | V |
| Collector Cutoff Current (VCB = 30 V) | ICBO | - | - | 15 nA | |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 | - | 420 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 V | |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 V | |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 MHz | |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 4.5 pF | |
| Maximum Collector Current | IC | - | - | 0.1 A | |
| Maximum Power Dissipation | PTM | - | - | 0.2 W |
Key Features
- ESD Protection: The BC847CWT3G offers protection against electrostatic discharge, enhancing the reliability of the device.
- Polarity Reversal Protection: It includes features to protect against polarity reversal, ensuring the transistor operates correctly even in adverse conditions.
- Data Line Protection: Suitable for protecting data lines from voltage spikes and other forms of electrical noise.
- Inductive Load Protection: Designed to handle inductive loads, making it versatile for various applications.
- Steering Logic: Can be used in steering logic circuits due to its high current gain and low saturation voltage.
- Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.
- AECQ101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
Applications
- General Purpose Amplifiers: Ideal for use in general-purpose amplifier circuits due to its high current gain and low noise figure.
- Switching Circuits: Suitable for switching applications where low saturation voltage and high current gain are required.
- Data Line Protection: Used in protecting data lines from electrical noise and voltage spikes.
- Automotive Electronics: Qualified for automotive applications, meeting AECQ101 standards and PPAP capabilities.
- Consumer Electronics: Can be used in various consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the package type of the BC847CWT3G transistor?
The BC847CWT3G is housed in the SOT-323/SC-70 package, which is a surface mount package suitable for low-power applications.
- What is the maximum collector current of the BC847CWT3G?
The maximum collector current is 0.1 A.
- What is the collector-emitter breakdown voltage of the BC847CWT3G?
The collector-emitter breakdown voltage is 45 V.
- What is the current gain (hFE) of the BC847CWT3G?
The DC current gain (hFE) ranges from 110 to 420 for IC = 10 mA and VCE = 5.0 V.
- What is the output capacitance of the BC847CWT3G?
The output capacitance is 4.5 pF at VCB = 10 V and f = 1.0 MHz.
- Is the BC847CWT3G Pb-free?
- What are some common applications of the BC847CWT3G?
- What is the maximum power dissipation of the BC847CWT3G?
- Does the BC847CWT3G have ESD protection?
- Is the BC847CWT3G AECQ101 qualified?
