BC847CWT3G
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onsemi BC847CWT3G

Manufacturer No:
BC847CWT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWT3G is an NPN bipolar transistor designed for general-purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-323/SC-70 package, which is suitable for low-power surface mount applications. This transistor is part of the BC847 series, known for its reliability and versatility in various electronic circuits.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Breakdown Voltage (VEB = 0) V(BR)CES - - 50 V
Collector-Base Breakdown Voltage V(BR)CBO - - 50 V
Emitter-Base Breakdown Voltage V(BR)EBO - - 6.0 V
Collector Cutoff Current (VCB = 30 V) ICBO - - 15 nA
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 - 420
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 0.25 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) - - 0.7 V
Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT - - 100 MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo - - 4.5 pF
Maximum Collector Current IC - - 0.1 A
Maximum Power Dissipation PTM - - 0.2 W

Key Features

  • ESD Protection: The BC847CWT3G offers protection against electrostatic discharge, enhancing the reliability of the device.
  • Polarity Reversal Protection: It includes features to protect against polarity reversal, ensuring the transistor operates correctly even in adverse conditions.
  • Data Line Protection: Suitable for protecting data lines from voltage spikes and other forms of electrical noise.
  • Inductive Load Protection: Designed to handle inductive loads, making it versatile for various applications.
  • Steering Logic: Can be used in steering logic circuits due to its high current gain and low saturation voltage.
  • Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.
  • AECQ101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.

Applications

  • General Purpose Amplifiers: Ideal for use in general-purpose amplifier circuits due to its high current gain and low noise figure.
  • Switching Circuits: Suitable for switching applications where low saturation voltage and high current gain are required.
  • Data Line Protection: Used in protecting data lines from electrical noise and voltage spikes.
  • Automotive Electronics: Qualified for automotive applications, meeting AECQ101 standards and PPAP capabilities.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the package type of the BC847CWT3G transistor?

    The BC847CWT3G is housed in the SOT-323/SC-70 package, which is a surface mount package suitable for low-power applications.

  2. What is the maximum collector current of the BC847CWT3G?

    The maximum collector current is 0.1 A.

  3. What is the collector-emitter breakdown voltage of the BC847CWT3G?

    The collector-emitter breakdown voltage is 45 V.

  4. What is the current gain (hFE) of the BC847CWT3G?

    The DC current gain (hFE) ranges from 110 to 420 for IC = 10 mA and VCE = 5.0 V.

  5. What is the output capacitance of the BC847CWT3G?

    The output capacitance is 4.5 pF at VCB = 10 V and f = 1.0 MHz.

  6. Is the BC847CWT3G Pb-free?
  7. What are some common applications of the BC847CWT3G?
  8. What is the maximum power dissipation of the BC847CWT3G?
  9. Does the BC847CWT3G have ESD protection?
  10. Is the BC847CWT3G AECQ101 qualified?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number BC847CWT3G BC847CLT3G BC847CWT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 150 mW 300 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-70-3 (SOT323)

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