Overview
The SBC856BWT1G is a general-purpose PNP silicon transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SC−70/SOT−323 package. This transistor is suitable for various general-purpose amplifier applications due to its robust electrical characteristics and compliance with automotive and industrial standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mAdc |
| Collector Current - Peak (1 ms pulse) | ICM | -130 | mA |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 883 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 125 - 220 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 - -0.65 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 - -0.9 | V |
Key Features
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental compliance.
- Housed in the SC−70/SOT−323 package, designed for low power surface mount applications.
- High collector-emitter breakdown voltage and collector-base breakdown voltage for robust performance.
- Low collector-emitter saturation voltage and base-emitter saturation voltage for efficient operation.
- Wide junction and storage temperature range (-55°C to +150°C) for reliability in various environments.
Applications
- General-purpose amplifier applications in electronic circuits.
- Automotive electronics, including systems requiring AEC-Q101 qualification.
- Industrial control systems and automation.
- Consumer electronics where low power and compact design are essential.
- Audio and signal processing circuits.
Q & A
- What is the collector-emitter voltage rating of the SBC856BWT1G transistor?
The collector-emitter voltage rating is -65 V.
- Is the SBC856BWT1G transistor RoHS compliant?
- What is the maximum continuous collector current for the SBC856BWT1G transistor?
The maximum continuous collector current is -100 mA.
- What is the thermal resistance, junction-to-ambient, for the SBC856BWT1G transistor?
The thermal resistance, junction-to-ambient, is 883 °C/W.
- What are the typical applications of the SBC856BWT1G transistor?
The SBC856BWT1G transistor is typically used in general-purpose amplifier applications, automotive electronics, industrial control systems, and consumer electronics.
- What is the DC current gain of the SBC856BWT1G transistor?
The DC current gain (hFE) ranges from 125 to 220 at IC = -10 mA and VCE = -5.0 V.
- What is the collector-emitter saturation voltage of the SBC856BWT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from -0.3 to -0.65 V.
- What is the base-emitter saturation voltage of the SBC856BWT1G transistor?
The base-emitter saturation voltage (VBE(sat)) ranges from -0.7 to -0.9 V.
- What is the junction and storage temperature range for the SBC856BWT1G transistor?
The junction and storage temperature range is -55°C to +150°C.
- Is the SBC856BWT1G transistor suitable for automotive applications?
