Overview
The BC857BWT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SC-70/SOT-323 package. This transistor is suitable for various amplifier applications due to its robust electrical characteristics and compact design.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -45 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mA |
| Collector Current - Peak (1 ms pulse) | IC | -200 | mA |
| DC Current Gain (hFE) | hFE | 125 - 420 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | -0.3 - 0.65 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | -0.7 - 0.9 | V |
| Current-Gain Bandwidth Product (fT) | fT | 100 | MHz |
| Output Capacitance (Cob) | Cob | 4.5 | pF |
| Noise Figure (NF) | NF | 10 | dB |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Compact SC-70/SOT-323 surface mount package for low power applications.
- High DC current gain (hFE) for efficient amplifier performance.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)) for minimal power loss.
Applications
- General purpose amplifier applications.
- Automotive electronics requiring AEC-Q101 qualification.
- Low power surface mount applications in various industries.
- Audio and signal processing circuits.
- Switching and logic circuits.
Q & A
- What is the collector-emitter voltage rating of the BC857BWT1G transistor?
The collector-emitter voltage rating is -45 V.
- What is the maximum continuous collector current for the BC857BWT1G?
The maximum continuous collector current is -100 mA.
- What is the typical DC current gain (hFE) of the BC857BWT1G?
The typical DC current gain (hFE) ranges from 125 to 420.
- Is the BC857BWT1G RoHS compliant?
- What is the package type of the BC857BWT1G transistor?
The package type is SC-70/SOT-323.
- What is the current-gain bandwidth product (fT) of the BC857BWT1G?
The current-gain bandwidth product (fT) is 100 MHz.
- What are the typical applications of the BC857BWT1G transistor?
General purpose amplifier applications, automotive electronics, low power surface mount applications, audio and signal processing circuits, and switching and logic circuits.
- Is the BC857BWT1G suitable for automotive applications?
- What is the noise figure (NF) of the BC857BWT1G transistor?
The noise figure (NF) is 10 dB.
- What is the output capacitance (Cob) of the BC857BWT1G transistor?
The output capacitance (Cob) is 4.5 pF.
