Overview
The BC856BWT1G is a PNP Bipolar Junction Transistor (BJT) manufactured by onsemi. It is designed for general-purpose amplifier applications and is housed in a SC-70 (SOT-323) package, which is suitable for low power surface-mount applications. This transistor is AEC-Q101 qualified and PPAP capable, making it reliable for use in various industrial, power management, and automotive applications.
Key Specifications
| Polarity | PNP |
|---|---|
| Collector Emitter Voltage Max | 65V |
| Continuous Collector Current | 100mA |
| Power Dissipation | 150mW |
| Transistor Case Style | SC-70 (SOT-323) |
| Transistor Mounting | Surface Mount |
| No. of Pins | 3 Pins |
| Transition Frequency | 100MHz |
| DC Current Gain hFE Min | 150 hFE |
| Operating Temperature Max | 150°C |
| Qualification | AEC-Q101 |
| MSL | MSL 1 - Unlimited |
Key Features
- AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial applications.
- PNP bipolar transistor with a maximum collector-emitter voltage of 65V and continuous collector current of 100mA.
- Low power dissipation of 150mW, suitable for surface-mount applications.
- Transition frequency of 100MHz, making it suitable for high-frequency applications.
- DC current gain (hFE) minimum of 150, providing stable amplification.
- Operating temperature up to 150°C, allowing for use in a wide range of environments.
- RoHS and REACH compliant, ensuring environmental sustainability.
Applications
- Industrial applications: Suitable for various industrial control and automation systems.
- Power Management: Used in power management circuits due to its low power dissipation and high reliability.
- Automotive: AEC-Q101 qualification makes it suitable for use in automotive systems, including control modules and sensors.
Q & A
- What is the polarity of the BC856BWT1G transistor?
The BC856BWT1G is a PNP bipolar transistor.
- What is the maximum collector-emitter voltage of the BC856BWT1G?
The maximum collector-emitter voltage is 65V.
- What is the continuous collector current of the BC856BWT1G?
The continuous collector current is 100mA.
- What is the power dissipation of the BC856BWT1G?
The power dissipation is 150mW.
- What is the package style of the BC856BWT1G?
The transistor is housed in a SC-70 (SOT-323) package.
- What is the transition frequency of the BC856BWT1G?
The transition frequency is 100MHz.
- What is the DC current gain (hFE) minimum of the BC856BWT1G?
The DC current gain (hFE) minimum is 150.
- What is the operating temperature maximum of the BC856BWT1G?
The operating temperature maximum is 150°C.
- Is the BC856BWT1G AEC-Q101 qualified?
Yes, the BC856BWT1G is AEC-Q101 qualified and PPAP capable.
- What are the typical applications of the BC856BWT1G?
The BC856BWT1G is used in industrial, power management, and automotive applications.
