BC856BWT1
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onsemi BC856BWT1

Manufacturer No:
BC856BWT1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP GP 65V 100MA SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BWT1 is a general-purpose PNP silicon transistor produced by onsemi. It is designed for low-power surface mount applications and is housed in the SC−70/SOT−323 package. This transistor is suitable for various general-purpose amplifier applications due to its robust electrical characteristics and compact design.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -65 V
Collector-Base Voltage VCBO -80 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -100 mA
Collector Cutoff Current (VCB = -30 V, TA = 25°C) ICBO -15 nA
DC Current Gain (IC = -10 mA, VCE = -5.0 V) hFE 125-420
Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VCE(sat) -0.3 V
Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VBE(sat) -0.7 V

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, Halogen Free/BFR Free, and RoHS Compliant.
  • Compact SC−70/SOT−323 package designed for low-power surface mount applications.
  • High DC current gain and low collector-emitter saturation voltage, making it efficient for amplifier applications.

Applications

The BC856BWT1 transistor is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Surface mount designs where space is limited.
  • Low-power electronic devices requiring reliable transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BC856BWT1 transistor?

    The collector-emitter voltage rating (VCEO) of the BC856BWT1 transistor is -65 V.

  2. What package type is the BC856BWT1 transistor housed in?

    The BC856BWT1 transistor is housed in the SC−70/SOT−323 package.

  3. Is the BC856BWT1 transistor RoHS compliant?

    Yes, the BC856BWT1 transistor is Pb-free, Halogen Free/BFR Free, and RoHS Compliant.

  4. What is the typical DC current gain of the BC856BWT1 transistor?

    The typical DC current gain (hFE) of the BC856BWT1 transistor ranges from 125 to 420.

  5. What are some common applications for the BC856BWT1 transistor?

    The BC856BWT1 transistor is commonly used in general-purpose amplifier circuits, automotive electronics, and low-power surface mount designs.

  6. Is the BC856BWT1 transistor suitable for high-temperature applications?

    The transistor has specified characteristics at various temperatures, but it is generally designed for operation up to 150°C. It is important to refer to the datasheet for detailed thermal specifications.

  7. What is the collector-emitter saturation voltage of the BC856BWT1 transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the BC856BWT1 transistor is typically -0.3 V.

  8. Can the BC856BWT1 transistor be used in life support systems or FDA Class 3 devices?

    No, the BC856BWT1 transistor is not designed or intended for use as components in life support systems or any FDA Class 3 devices.

  9. What is the base-emitter saturation voltage of the BC856BWT1 transistor?

    The base-emitter saturation voltage (VBE(sat)) of the BC856BWT1 transistor is typically -0.7 V.

  10. Is the BC856BWT1 transistor available from major electronics distributors?

    Yes, the BC856BWT1 transistor is available from major electronics distributors such as Mouser and Digi-Key.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856BWT1 BC856BWT1G BC856BLT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Transistor Type - PNP -
Current - Collector (Ic) (Max) - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - 65 V -
Vce Saturation (Max) @ Ib, Ic - 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 220 @ 2mA, 5V -
Power - Max - 150 mW -
Frequency - Transition - 100MHz -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - SC-70, SOT-323 -
Supplier Device Package - SC-70-3 (SOT323) -

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