Overview
The MMBT6427LT1G is a Darlington NPN bipolar junction transistor (BJT) manufactured by onsemi. This surface-mount transistor is packaged in a SOT-23-3 (TO-236) configuration, making it suitable for a variety of applications requiring high current gain and low noise. The MMBT6427LT1G is designed to provide reliable performance in a compact form factor, making it ideal for use in modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Configuration | NPN Darlington |
| Maximum DC Collector Current | 500 mA |
| Maximum Collector-Emitter Voltage | 40 V |
| Maximum Power Dissipation (Pd) | 225 mW |
| Nominal Transition Frequency (fT) | 130 MHz |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 417 °C/W |
| Junction and Storage Temperature (TJ, Tstg) | -55 to +150 °C |
| Maximum Collector Cut-off Current | 50 nA |
| Mounting Style | SMD/SMT (SOT-23-3/TO-236) |
Key Features
- Darlington configuration for high current gain
- Surface mount SOT-23-3 (TO-236) package for compact designs
- Maximum collector current of 500 mA and maximum collector-emitter voltage of 40 V
- Low noise operation suitable for various applications
- High nominal transition frequency of 130 MHz
- Wide operating temperature range from -55 to +150 °C
Applications
The MMBT6427LT1G is versatile and can be used in a range of applications, including:
- Power amplifiers and switching circuits
- Audio amplifiers and sound systems
- Automotive and industrial control systems
- General-purpose amplification and switching in electronic devices
Q & A
- What is the configuration of the MMBT6427LT1G transistor? The MMBT6427LT1G is an NPN Darlington transistor.
- What is the maximum DC collector current of the MMBT6427LT1G? The maximum DC collector current is 500 mA.
- What is the maximum collector-emitter voltage of the MMBT6427LT1G? The maximum collector-emitter voltage is 40 V.
- What is the nominal transition frequency (fT) of the MMBT6427LT1G? The nominal transition frequency is 130 MHz.
- What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT6427LT1G? The thermal resistance is 417 °C/W.
- What is the junction and storage temperature range of the MMBT6427LT1G? The junction and storage temperature range is -55 to +150 °C.
- What is the maximum power dissipation (Pd) of the MMBT6427LT1G? The maximum power dissipation is 225 mW.
- What is the package type of the MMBT6427LT1G? The package type is SOT-23-3 (TO-236) surface mount.
- What are some common applications of the MMBT6427LT1G? Common applications include power amplifiers, audio amplifiers, automotive and industrial control systems, and general-purpose amplification and switching.
- Where can I find additional details and specifications for the MMBT6427LT1G? Additional details and specifications can be found on the official onsemi website, Digi-Key, Mouser Electronics, and other authorized distributors.
