Overview
The NSVMMBT6429LT1G is an NPN silicon amplifier transistor produced by onsemi. This device is part of the MMBT6429 series and is specifically designed for automotive and other applications that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The transistor is lead-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 55 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) | hFE | 250 - 500 | |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) | VCE(sat) | 0.2 - 0.6 | Vdc |
| Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) | VBE(on) | 0.56 - 0.66 | Vdc |
| Current-Gain - Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 - 700 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High DC current gain with values ranging from 250 to 500.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.2 to 0.6 Vdc.
- Base-emitter on voltage (VBE(on)) of 0.56 to 0.66 Vdc.
- High current-gain - bandwidth product (fT) of 100 to 700 MHz.
- Small package size (SOT-23) for compact designs.
Applications
The NSVMMBT6429LT1G transistor is suitable for a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics such as sensors, actuators, and control modules.
- General-purpose amplification: It can be used in various amplifier circuits requiring high gain and low noise.
- Switching applications: Its low saturation voltage and high current gain make it suitable for switching circuits.
- Consumer electronics: It can be used in audio amplifiers, power supplies, and other consumer electronic devices.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the NSVMMBT6429LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 45 Vdc. - Is the NSVMMBT6429LT1G transistor RoHS compliant?
Yes, the transistor is RoHS compliant, lead-free, and halogen-free. - What is the DC current gain (hFE) range for this transistor?
The DC current gain (hFE) ranges from 250 to 500. - What is the typical collector-emitter saturation voltage (VCE(sat)) for this transistor?
The typical collector-emitter saturation voltage (VCE(sat)) is between 0.2 and 0.6 Vdc. - What is the base-emitter on voltage (VBE(on)) for this transistor?
The base-emitter on voltage (VBE(on)) is between 0.56 and 0.66 Vdc. - What is the current-gain - bandwidth product (fT) for this transistor?
The current-gain - bandwidth product (fT) ranges from 100 to 700 MHz. - What package type is the NSVMMBT6429LT1G transistor available in?
The transistor is available in the SOT-23 package. - Is the NSVMMBT6429LT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What are the junction and storage temperature ranges for this transistor?
The junction and storage temperature ranges are -55°C to +150°C. - What is the thermal resistance, junction-to-ambient (RJA) for this transistor on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
