STF31N65M5
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STMicroelectronics STF31N65M5

Manufacturer No:
STF31N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 22A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF31N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Available in the TO-220FP package, the STF31N65M5 is part of a family of MOSFETs that include the STB31N65M5, STP31N65M5, and STW31N65M5, each in different packages.

Key Specifications

ParameterValueUnit
Order CodeSTF31N65M5
Maximum Drain-Source Voltage (VDS)650V
Maximum Drain Current (ID) at TC = 25 °C22A
Maximum Drain Current (ID) at TC = 100 °C13.9A
Maximum Gate-Source Voltage (VGS)±25V
Maximum On-Resistance (RDS(on))0.148Ω
PackageTO-220FP
Operating Junction Temperature Range-55 to 150°C
Total Power Dissipation at TC = 25 °C30W

Key Features

  • Extremely low RDS(on)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested

Applications

The STF31N65M5 is primarily used in switching applications where high power and superior efficiency are required. These include but are not limited to power supplies, motor control, and other high-power electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STF31N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 22 A.
  3. What is the maximum gate-source voltage?
    The maximum gate-source voltage (VGS) is ±25 V.
  4. What is the typical on-resistance (RDS(on)) of the STF31N65M5?
    The typical on-resistance (RDS(on)) is 0.148 Ω.
  5. In what package is the STF31N65M5 available?
    The STF31N65M5 is available in the TO-220FP package.
  6. What is the operating junction temperature range of the STF31N65M5?
    The operating junction temperature range is -55 to 150 °C.
  7. What are the key features of the STF31N65M5?
    The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
  8. What are the typical applications of the STF31N65M5?
    The typical applications include switching applications such as power supplies and motor control.
  9. What is the total power dissipation at 25 °C for the STF31N65M5?
    The total power dissipation at 25 °C is 30 W.
  10. Is the STF31N65M5 100% avalanche tested?
    Yes, the STF31N65M5 is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STW31N65M5
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Similar Products

Part Number STF31N65M5 STF35N65M5 STF34N65M5 STF38N65M5 STF32N65M5 STF21N65M5 STF30N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 27A (Tc) 28A (Tc) 30A (Tc) 24A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V 98mOhm @ 13.5A, 10V 110mOhm @ 14.5A, 10V 95mOhm @ 15A, 10V 119mOhm @ 12A, 10V 190mOhm @ 8.5A, 10V 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 83 nC @ 10 V 70 nC @ 10 V 71 nC @ 10 V 72 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 100 V 3750 pF @ 100 V 2590 pF @ 100 V 3000 pF @ 100 V 3320 pF @ 100 V 1950 pF @ 100 V 2880 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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