STW31N65M5
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STMicroelectronics STW31N65M5

Manufacturer No:
STW31N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 22A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW31N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 technology. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency. Available in the TO-247 package, the STW31N65M5 is part of a series that combines vertical process technology with the well-known PowerMESH horizontal layout, enhancing its switching performance and overall reliability.

Key Specifications

ParameterValueUnit
VDS @ TJMAX650V
RDS(on) max.0.124Ω
ID22A
PackageTO-247
VGS(th)2-4V
IS22A
VSD1.5V

Key Features

  • Extremely low RDS(on) for high efficiency
  • Low gate charge and input capacitance for excellent switching performance
  • 100% avalanche tested for reliability
  • MDmesh M5 innovative vertical process technology combined with PowerMESH horizontal layout

Applications

  • Switching applications such as power supplies, motor drives, and DC-DC converters
  • High-power electronic systems requiring superior efficiency and reliability

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW31N65M5? The maximum drain-source voltage is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STW31N65M5? The typical on-resistance is 0.124 Ω.
  3. What is the maximum continuous drain current (ID) of the STW31N65M5? The maximum continuous drain current is 22 A.
  4. In which package is the STW31N65M5 available? The STW31N65M5 is available in the TO-247 package.
  5. What are the key features of the STW31N65M5? Key features include extremely low RDS(on), low gate charge and input capacitance, and 100% avalanche testing.
  6. What are the typical applications of the STW31N65M5? Typical applications include switching power supplies, motor drives, and DC-DC converters.
  7. What technology is used in the STW31N65M5? The STW31N65M5 uses MDmesh M5 innovative vertical process technology combined with PowerMESH horizontal layout.
  8. What is the forward on voltage (VSD) of the STW31N65M5? The forward on voltage is 1.5 V.
  9. What is the reverse recovery time (trr) of the STW31N65M5? The reverse recovery time is approximately 336 ns.
  10. Is the STW31N65M5 suitable for high-power applications? Yes, the STW31N65M5 is highly suitable for high-power applications due to its low on-resistance and high efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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MOSFET N-CH 650V 22A TO220
STW31N65M5
STW31N65M5
MOSFET N-CH 650V 22A TO247
STF31N65M5
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Similar Products

Part Number STW31N65M5 STW32N65M5 STW34N65M5 STW38N65M5 STW35N65M5 STW21N65M5 STW30N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 24A (Tc) 28A (Tc) 30A (Tc) 27A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V 119mOhm @ 12A, 10V 110mOhm @ 14A, 10V 95mOhm @ 15A, 10V 98mOhm @ 13.5A, 10V 190mOhm @ 8.5A, 10V 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 72 nC @ 10 V 62.5 nC @ 10 V 71 nC @ 10 V 83 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 100 V 3320 pF @ 100 V 2700 pF @ 100 V 3000 pF @ 100 V 3750 pF @ 100 V 1950 pF @ 100 V 2880 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 125W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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