Overview
The STW31N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 technology. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency. Available in the TO-247 package, the STW31N65M5 is part of a series that combines vertical process technology with the well-known PowerMESH horizontal layout, enhancing its switching performance and overall reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJMAX | 650 | V |
| RDS(on) max. | 0.124 | Ω |
| ID | 22 | A |
| Package | TO-247 | |
| VGS(th) | 2-4 | V |
| IS | 22 | A |
| VSD | 1.5 | V |
Key Features
- Extremely low RDS(on) for high efficiency
- Low gate charge and input capacitance for excellent switching performance
- 100% avalanche tested for reliability
- MDmesh M5 innovative vertical process technology combined with PowerMESH horizontal layout
Applications
- Switching applications such as power supplies, motor drives, and DC-DC converters
- High-power electronic systems requiring superior efficiency and reliability
Q & A
- What is the maximum drain-source voltage (VDS) of the STW31N65M5? The maximum drain-source voltage is 650 V.
- What is the typical on-resistance (RDS(on)) of the STW31N65M5? The typical on-resistance is 0.124 Ω.
- What is the maximum continuous drain current (ID) of the STW31N65M5? The maximum continuous drain current is 22 A.
- In which package is the STW31N65M5 available? The STW31N65M5 is available in the TO-247 package.
- What are the key features of the STW31N65M5? Key features include extremely low RDS(on), low gate charge and input capacitance, and 100% avalanche testing.
- What are the typical applications of the STW31N65M5? Typical applications include switching power supplies, motor drives, and DC-DC converters.
- What technology is used in the STW31N65M5? The STW31N65M5 uses MDmesh M5 innovative vertical process technology combined with PowerMESH horizontal layout.
- What is the forward on voltage (VSD) of the STW31N65M5? The forward on voltage is 1.5 V.
- What is the reverse recovery time (trr) of the STW31N65M5? The reverse recovery time is approximately 336 ns.
- Is the STW31N65M5 suitable for high-power applications? Yes, the STW31N65M5 is highly suitable for high-power applications due to its low on-resistance and high efficiency.
