STMicroelectronics STW38N65M5

Manufacturer No:: STW38N65M5
Manufacturer:: STMicroelectronics
Package:: Tube
Description:: MOSFET N-CH 650V 30A TO247
Delivery:
Payment:

Product Introduction

Overview

The STW38N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the well-known PowerMESH™ horizontal layout. This device is particularly suited for high-power and high-efficiency applications due to its extremely low on-resistance. It is packaged in a TO-247-4 package, making it ideal for various high-performance switching applications.

Key Specifications

Parameter	Value	Unit
V_DS @ T_Jmax	710	V
R_DS(on) max	0.095	Ω
I_D	30	A
V_GS	±25	V
I_D (pulsed)	120	A
P_TOT	190	W
T_j max	150	°C
T_stg	-55 to 150	°C
dv/dt	15 V/ns (ISD ≤ 30 A, di/dt ≤ 400 A/μs)	V/ns
Package	TO-247-4
Packing Type	Tube
RoHS Compliant	Ecopack2

Key Features

Extremely low R_DS(on) of 0.095 Ω typical
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Higher V_DSS rating and high dv/dt capability

Applications

High efficiency switching applications
Servers
PV inverters
Telecom infrastructure
Multi kW battery chargers

Q & A

What is the maximum drain-source voltage (V_DS) of the STW38N65M5?
The maximum drain-source voltage (V_DS) is 710 V.
What is the typical on-resistance (R_DS(on)) of the STW38N65M5?
The typical on-resistance (R_DS(on)) is 0.095 Ω.
What is the maximum continuous drain current (I_D) at 25°C?
The maximum continuous drain current (I_D) at 25°C is 30 A.
What is the maximum junction temperature (T_j) for the STW38N65M5?
The maximum junction temperature (T_j) is 150°C.
What are the key features of the STW38N65M5?
The key features include extremely low R_DS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
What are the typical applications of the STW38N65M5?
The typical applications include high efficiency switching applications, servers, PV inverters, telecom infrastructure, and multi kW battery chargers.
What is the package type of the STW38N65M5?
The package type is TO-247-4.
Is the STW38N65M5 RoHS compliant?
Yes, the STW38N65M5 is RoHS compliant with an Ecopack2 designation.
What is the maximum pulse drain current (I_D) for the STW38N65M5?
The maximum pulse drain current (I_D) is 120 A.
What is the thermal resistance junction-case (R_thj-case) for the TO-247 package?
The thermal resistance junction-case (R_thj-case) is 0.66 °C/W.

In Stock

UnitPrice: $7.94

Quantity: 20

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Part Number	STW38N65M5	STW88N65M5	STW78N65M5	STW18N65M5	STW30N65M5	STW31N65M5	STW32N65M5	STW34N65M5	STW35N65M5
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active	Obsolete	Active	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V	650 V	650 V	650 V	650 V	650 V	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)	84A (Tc)	69A (Tc)	15A (Tc)	22A (Tc)	22A (Tc)	24A (Tc)	28A (Tc)	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 15A, 10V	29mOhm @ 42A, 10V	32mOhm @ 34.5A, 10V	220mOhm @ 7.5A, 10V	139mOhm @ 11A, 10V	148mOhm @ 11A, 10V	119mOhm @ 12A, 10V	110mOhm @ 14A, 10V	98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V	204 nC @ 10 V	203 nC @ 10 V	31 nC @ 10 V	64 nC @ 10 V	45 nC @ 10 V	72 nC @ 10 V	62.5 nC @ 10 V	83 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 100 V	8825 pF @ 100 V	9000 pF @ 100 V	1240 pF @ 100 V	2880 pF @ 100 V	816 pF @ 100 V	3320 pF @ 100 V	2700 pF @ 100 V	3750 pF @ 100 V
FET Feature	-	-	-	-	-	-	-	-	-
Power Dissipation (Max)	190W (Tc)	450W (Tc)	450W (Tc)	110W (Tc)	140W (Tc)	150W (Tc)	150W (Tc)	190W (Tc)	160W (Tc)
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	71 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	3000 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	190W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

STMicroelectronics STW38N65M5

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

STP38N65M5

STW38N65M5

Similar Products

Related Product By Categories

BSS84PH6327XTSA2

CSD17575Q3T

NTMFS5C646NLT1G

2N7002-TP

CSD17581Q5AT

CSD18511Q5A

STD105N10F7AG

2N7002AQ-13

FDMA6676PZ

PH1930AL,115

NTTFS4939NTAG

STW6N120K3

Related Product By Brand

BTA12-800CWRG

STF140N6F7

STM32L433VCT3

TDA7498LTR

TS944AIDT

LM2904WHYDT

LM239DT

VNQ810PTR-E

VNP35N07FI

VNQ830PEP-E

AST1S31HF

AIS326DQ