STW88N65M5
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STMicroelectronics STW88N65M5

Manufacturer No:
STW88N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 84A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW88N65M5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ M5 series, which combines innovative vertical process technology with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STW88N65M5 particularly suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Fet Type N-Channel
No of Channels 1
Drain-to-Source Voltage [Vdss] 710 V (for STW88N65M5-4), 650 V (for STW88N65M5)
Drain-Source On Resistance-Max 29 mΩ
Rated Power Dissipation 450 W
Gate Charge [Qg] 204 nC
Gate-Source Voltage-Max [Vgss] ±25 V
Drain Current 84 A
Gate Source Threshold 4 V
Technology MDmesh™ M5
Package Style TO-247-4 (for STW88N65M5-4), TO-247-3 (for STW88N65M5)
Mounting Method Through Hole
Input Capacitance 8825 pF
Operating Temperature 150°C (TJ)

Key Features

  • Worldwide best RDS(on) in TO-247 package
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance thanks to the extra driving source pin
  • Easy to drive
  • 100% avalanche tested

Applications

  • High efficiency switching applications
  • Servers
  • PV inverters
  • Telecom infrastructure
  • Multi kW battery chargers

Q & A

  1. What is the drain-to-source voltage rating of the STW88N65M5?

    The drain-to-source voltage rating is 710 V for the STW88N65M5-4 and 650 V for the STW88N65M5.

  2. What is the maximum drain current of the STW88N65M5?

    The maximum drain current is 84 A.

  3. What is the on-resistance of the STW88N65M5?

    The on-resistance is 29 mΩ.

  4. What package styles are available for the STW88N65M5?

    The STW88N65M5 is available in TO-247-4 and TO-247-3 packages.

  5. What is the operating temperature range of the STW88N65M5?

    The operating temperature range is up to 150°C (TJ).

  6. What are the key features of the STW88N65M5?

    The key features include worldwide best RDS(on) in TO-247, higher VDSS rating, higher dv/dt capability, excellent switching performance, easy to drive, and 100% avalanche tested.

  7. What are some typical applications for the STW88N65M5?

    Typical applications include high efficiency switching applications such as servers, PV inverters, telecom infrastructure, and multi kW battery chargers.

  8. What is the gate charge of the STW88N65M5?

    The gate charge is 204 nC.

  9. What is the maximum gate-source voltage of the STW88N65M5?

    The maximum gate-source voltage is ±25 V.

  10. What technology is used in the STW88N65M5?

    The STW88N65M5 uses MDmesh™ M5 technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:29mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:204 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:8825 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STWA88N65M5
STWA88N65M5
MOSFET N-CH 650V 84A TO247

Similar Products

Part Number STW88N65M5 STWA88N65M5 STW38N65M5 STW78N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 84A (Tc) 84A (Tc) 30A (Tc) 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 42A, 10V 29mOhm @ 42A, 10V 95mOhm @ 15A, 10V 32mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 204 nC @ 10 V 204 nC @ 10 V 71 nC @ 10 V 203 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 8825 pF @ 100 V 8825 pF @ 100 V 3000 pF @ 100 V 9000 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 450W (Tc) 450W (Tc) 190W (Tc) 450W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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