STW78N65M5
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STMicroelectronics STW78N65M5

Manufacturer No:
STW78N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 69A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW78N65M5 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ V series, known for its excellent switching performance and high reliability. It is packaged in a TO-247 package, making it suitable for a variety of high-power applications. The STW78N65M5 is designed to operate at high voltages and currents, making it a robust choice for automotive and industrial systems.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)650 V
Drain Current (Id)41.5 A (continuous), 69 A (pulsed)
On-Resistance (Rds(on))0.024 Ω (typical)
PackageTO-247
TechnologyMDmesh™ V
PolarizationUnipolar (N-channel)

Key Features

  • High voltage and current handling capabilities, making it suitable for demanding applications.
  • Low on-resistance (Rds(on)) of 0.024 Ω, which minimizes power losses and enhances efficiency.
  • Excellent switching performance due to the MDmesh™ V technology.
  • Automotive-grade reliability, ensuring robust operation in harsh environments.
  • TO-247 package for easy mounting and thermal management.

Applications

  • Automotive systems: power steering, power windows, and other high-power applications.
  • Industrial power supplies and motor drives.
  • High-frequency switching applications.
  • Power conversion systems, including DC-DC converters and inverters.

Q & A

  1. What is the maximum drain-source voltage of the STW78N65M5? The maximum drain-source voltage is 650 V.
  2. What is the typical on-resistance of the STW78N65M5? The typical on-resistance is 0.024 Ω.
  3. What package type is the STW78N65M5 available in? The STW78N65M5 is available in a TO-247 package.
  4. What is the continuous drain current rating of the STW78N65M5? The continuous drain current rating is 41.5 A.
  5. What technology is used in the STW78N65M5? The STW78N65M5 uses MDmesh™ V technology.
  6. Is the STW78N65M5 suitable for automotive applications? Yes, it is an automotive-grade component.
  7. What are some common applications for the STW78N65M5? Common applications include automotive systems, industrial power supplies, and high-frequency switching applications.
  8. How does the MDmesh™ V technology benefit the STW78N65M5? The MDmesh™ V technology enhances switching performance and reduces power losses.
  9. What is the maximum pulsed drain current of the STW78N65M5? The maximum pulsed drain current is 69 A.
  10. Where can I find detailed specifications for the STW78N65M5? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like TME and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:32mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:203 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW78N65M5 STW88N65M5 STW38N65M5 STW77N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 84A (Tc) 30A (Tc) 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34.5A, 10V 29mOhm @ 42A, 10V 95mOhm @ 15A, 10V 38mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 10 V 204 nC @ 10 V 71 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V 25V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 100 V 8825 pF @ 100 V 3000 pF @ 100 V 9800 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 450W (Tc) 450W (Tc) 190W (Tc) 400W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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