STW77N65M5
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STMicroelectronics STW77N65M5

Manufacturer No:
STW77N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 69A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW77N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is based on the innovative MDmesh™ V technology, which combines an advanced vertical process to achieve superior electrical characteristics. This device is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))0.033 Ω (typical)
Continuous Drain Current (Id)69 A
Pulse Drain Current (Id(pulse))Not specified, but typically higher than continuous current
Power Dissipation (Pd)Not specified, but depends on thermal conditions
Package TypeTO-247

Key Features

  • High Voltage Rating: The STW77N65M5 operates at a high voltage of 650 V, making it suitable for applications requiring high voltage handling.
  • Low On-Resistance: With a typical on-resistance of 0.033 Ω, this MOSFET minimizes energy losses and improves efficiency.
  • High Current Capability: It can handle a continuous drain current of 69 A, which is beneficial for high-power applications.
  • MDmesh™ V Technology: This proprietary technology enhances the device's performance by improving the trade-off between on-resistance and switching performance.
  • TO-247 Package: The device is packaged in a TO-247 package, which is widely used in power electronics for its good thermal dissipation characteristics.

Applications

The STW77N65M5 is designed for use in various high-power applications, including:

  • Power Supplies: High-voltage DC-DC converters and power supplies.
  • Motor Control: Inverter stages for motor control in industrial and automotive applications.
  • Renewable Energy Systems: Solar and wind power systems that require high efficiency and reliability.
  • Industrial Automation: High-power drives and control systems in industrial automation.

Q & A

  1. What is the voltage rating of the STW77N65M5?
    The voltage rating of the STW77N65M5 is 650 V.
  2. What is the typical on-resistance of the STW77N65M5?
    The typical on-resistance of the STW77N65M5 is 0.033 Ω.
  3. What is the continuous drain current of the STW77N65M5?
    The continuous drain current of the STW77N65M5 is 69 A.
  4. What package type is the STW77N65M5 available in?
    The STW77N65M5 is available in the TO-247 package.
  5. What technology is used in the STW77N65M5?
    The STW77N65M5 uses STMicroelectronics' MDmesh™ V technology.
  6. What are some typical applications of the STW77N65M5?
    The STW77N65M5 is used in power supplies, motor control, renewable energy systems, and industrial automation.
  7. Where can I find the datasheet for the STW77N65M5?
    The datasheet for the STW77N65M5 can be found on the STMicroelectronics website or through various electronic component databases.
  8. What are the benefits of using the MDmesh™ V technology in the STW77N65M5?
    The MDmesh™ V technology enhances the trade-off between on-resistance and switching performance, leading to improved efficiency and reduced energy losses.
  9. How does the TO-247 package benefit the STW77N65M5?
    The TO-247 package provides good thermal dissipation characteristics, which is crucial for high-power applications.
  10. Is the STW77N65M5 suitable for high-temperature environments?
    The suitability of the STW77N65M5 for high-temperature environments depends on the specific thermal conditions and the device's thermal management. Refer to the datasheet for detailed thermal specifications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:38mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):25V
Input Capacitance (Ciss) (Max) @ Vds:9800 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW77N65M5 STW78N65M5 STW57N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 69A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 34.5A, 10V 32mOhm @ 34.5A, 10V 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 203 nC @ 10 V 98 nC @ 10 V
Vgs (Max) 25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 9800 pF @ 100 V 9000 pF @ 100 V 4200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 400W (Tc) 450W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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