Overview
The STW57N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is based on the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This combination results in extremely low on-resistance, making the STW57N65M5 particularly suitable for applications requiring high power and superior efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 650 | V |
| On-Resistance (RDS(on)) max. | 63 mΩ | mΩ |
| Continuous Drain Current (ID) at TC = 25 °C | 42 A | A |
| Continuous Drain Current (ID) at TC = 100 °C | 26.5 A | A |
| Pulsed Drain Current (IDM) | 168 A | A |
| Total Power Dissipation (PTOT) at TC = 25 °C | 250 W | W |
| Gate-Source Voltage (VGS) | ±25 V | V |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.5 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 °C/W | °C/W |
| Storage Temperature Range (Tstg) | -55 to 150 °C | °C |
| Operating Junction Temperature Range (TJ) | -55 to 150 °C | °C |
| Gate Charge (Qg) | 98 nC | nC |
| Rise Time | 9 ns | ns |
| Fall Time | 8 ns | ns |
| Input Capacitance | 4200 pF | pF |
| Package Style | TO-247-3, TO-247-4 | |
| Mounting Method | Through Hole |
Key Features
- Extremely low on-resistance (RDS(on)) of 63 mΩ max.
- Low gate charge and input capacitance.
- Excellent switching performance.
- 100% avalanche tested.
- Kelvin terminal for improved switching characteristics.
- High power dissipation capability of up to 250 W.
Applications
The STW57N65M5 is designed for high-power switching applications where efficiency and reliability are critical. Typical applications include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial and automotive power systems.
- High-frequency switching circuits.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW57N65M5?
The maximum drain-source voltage (VDS) is 650 V. - What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 42 A. - What is the typical on-resistance (RDS(on)) of the STW57N65M5?
The typical on-resistance (RDS(on)) is 56 mΩ. - What are the key features of the STW57N65M5?
The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing. - What are the typical applications of the STW57N65M5?
Typical applications include power supplies, DC-DC converters, motor control and drive systems, and high-frequency switching circuits. - What is the thermal resistance, junction-to-case (RthJC), of the STW57N65M5?
The thermal resistance, junction-to-case (RthJC), is 0.5 °C/W. - What is the storage temperature range for the STW57N65M5?
The storage temperature range is -55 to 150 °C. - What is the gate charge (Qg) of the STW57N65M5?
The gate charge (Qg) is 98 nC. - What package styles are available for the STW57N65M5?
The STW57N65M5 is available in TO-247-3 and TO-247-4 packages. - What is the mounting method for the STW57N65M5?
The mounting method is Through Hole (THT).
