Overview
The STF57N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. Available in TO-220FP packaging, the STF57N65M5 is part of a family that includes the STB57N65M5 and STP57N65M5, each with different package options.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| RDS(on) (On-Resistance) | 56 mΩ (typ.), 63 mΩ (max.) | mΩ |
| ID (Drain Current) | 42 A | A |
| VGS(th) (Gate Threshold Voltage) | 2.5 - 4 V | V |
| Qg (Total Gate Charge) | 98 nC | nC |
| Coss (Output Capacitance) | 4200 pF | pF |
| Crss (Reverse Transfer Capacitance) | 115 pF | pF |
| Rg (Gate Input Resistance) | 1.3 Ω | Ω |
| td(v) (Voltage Delay Time) | 73 ns | ns |
| tr(v) (Voltage Rise Time) | 15 ns | ns |
| tf(i) (Current Fall Time) | 12 ns | ns |
Key Features
- Extremely low RDS(on) for high efficiency
- Low gate charge and input capacitance for excellent switching performance
- 100% avalanche tested for reliability
- High power handling capability
- Available in TO-220FP package for versatile application
Applications
- Switching applications, including power supplies, motor control, and power conversion systems
- High-power electronic devices requiring efficient and reliable MOSFETs
- Industrial and automotive applications where high current and voltage handling are necessary
Q & A
- What is the maximum drain-source voltage (VDS) of the STF57N65M5?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STF57N65M5?
The typical on-resistance (RDS(on)) is 56 mΩ.
- What is the maximum drain current (ID) of the STF57N65M5?
The maximum drain current (ID) is 42 A.
- What is the gate threshold voltage (VGS(th)) range of the STF57N65M5?
The gate threshold voltage (VGS(th)) range is 2.5 - 4 V.
- What is the total gate charge (Qg) of the STF57N65M5?
The total gate charge (Qg) is 98 nC.
- What are the typical switching times for the STF57N65M5?
The typical switching times include a voltage delay time (td(v)) of 73 ns, a voltage rise time (tr(v)) of 15 ns, and a current fall time (tf(i)) of 12 ns.
- What are the key features of the STF57N65M5?
The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
- In what package is the STF57N65M5 available?
The STF57N65M5 is available in the TO-220FP package.
- What are some common applications for the STF57N65M5?
Common applications include switching applications, power supplies, motor control, and high-power electronic devices.
- Why is the MDmesh M5 technology important for the STF57N65M5?
The MDmesh M5 technology provides extremely low on-resistance and excellent switching performance, making it highly efficient for high-power applications.
