Overview
The STP57N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, leveraging the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency.
Available in TO-220 packages, the STP57N65M5 is part of a family that includes the STB57N65M5 and STF57N65M5, each offering different packaging options. These MOSFETs are characterized by their excellent switching performance, low gate charge, and input capacitance, as well as being 100% avalanche tested.
Key Specifications
| Parameter | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|
| VDS (Drain-source voltage) | - | - | 650 | V |
| RDS(on) (Static drain-source on-resistance) | - | 56 | 63 | mΩ |
| ID (Continuous drain current) | - | - | 42 | A |
| VGS(th) (Gate threshold voltage) | 3 | 4 | 5 | V |
| Ciss (Input capacitance) | - | 4200 | - | pF |
| Coss (Output capacitance) | - | 115 | - | pF |
| Crss (Reverse transfer capacitance) | - | 9 | - | pF |
| Qg (Total gate charge) | - | 98 | - | nC |
| td(v) (Voltage delay time) | - | 73 | - | ns |
Key Features
- Extremely low RDS(on) for high power and superior efficiency.
- Low gate charge and input capacitance for excellent switching performance.
- 100% avalanche tested for reliability.
- Available in TO-220, TO-220FP, and D²PAK packages to suit various application needs.
- ECOPACK compliant packages for environmental sustainability.
Applications
The STP57N65M5 is particularly suited for switching applications that require high power handling and efficient operation. These include but are not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP57N65M5?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STP57N65M5?
The typical on-resistance (RDS(on)) is 56 mΩ.
- What is the continuous drain current (ID) rating of the STP57N65M5?
The continuous drain current (ID) rating is 42 A.
- What are the key features of the STP57N65M5?
The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
- In which packages is the STP57N65M5 available?
The STP57N65M5 is available in the TO-220 package, while related models are available in TO-220FP and D²PAK packages.
- What are some typical applications for the STP57N65M5?
Typical applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and industrial and automotive power management systems.
- Is the STP57N65M5 environmentally compliant?
- What is the gate threshold voltage (VGS(th)) of the STP57N65M5?
The gate threshold voltage (VGS(th)) ranges from 3 V to 5 V.
- What is the total gate charge (Qg) of the STP57N65M5?
The total gate charge (Qg) is typically 98 nC.
- What is the voltage delay time (td(v)) of the STP57N65M5?
The voltage delay time (td(v)) is typically 73 ns.
