Overview
The STB57N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is renowned for its extremely low on-resistance, making it highly suitable for applications that demand high power and superior efficiency.
The STB57N65M5 is available in various packages, including D²PAK, TO-220FP, and TO-220, catering to different design requirements. It features excellent switching performance, low gate charge, and input capacitance, along with 100% avalanche testing, ensuring reliability and robustness in various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 650 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.056 (typ.), 0.063 (max.) | Ω |
| Drain Current (ID) | 42 | A |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Gate-Body Leakage Current (IGSS) | ±100 | nA |
| Total Gate Charge (Qg) | 98 | nC |
| Output Capacitance (Coss) | 4200 | pF |
| Reverse Transfer Capacitance (Crss) | 115 | pF |
| Gate Input Resistance (Rg) | 1.3 | Ω |
Key Features
- Extremely low on-resistance (RDS(on))
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested for reliability
- High VDSS rating and high dv/dt capability
- Easy to drive due to low gate charge
Applications
The STB57N65M5 is particularly suited for various switching applications where high power and superior efficiency are critical. These include but are not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Industrial and automotive power management systems
Q & A
- What is the maximum drain-source breakdown voltage of the STB57N65M5?
The maximum drain-source breakdown voltage (VBRDSS) is 650 V.
- What is the typical on-resistance of the STB57N65M5?
The typical static drain-source on-resistance (RDS(on)) is 0.056 Ω.
- What are the available packages for the STB57N65M5?
The STB57N65M5 is available in D²PAK, TO-220FP, and TO-220 packages.
- What are the key features of the STB57N65M5?
The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
- What is the maximum drain current of the STB57N65M5?
The maximum drain current (ID) is 42 A.
- What is the gate threshold voltage range of the STB57N65M5?
The gate threshold voltage (VGS(th)) ranges from 3 to 5 V.
- What is the total gate charge of the STB57N65M5?
The total gate charge (Qg) is 98 nC.
- What are the typical applications of the STB57N65M5?
Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.
- Is the STB57N65M5 suitable for high-frequency switching?
Yes, the STB57N65M5 is suitable for high-frequency switching due to its excellent switching performance and low gate charge.
- What is the significance of 100% avalanche testing for the STB57N65M5?
100% avalanche testing ensures the device's reliability and robustness under extreme conditions, making it more reliable for critical applications.
