STI57N65M5
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STMicroelectronics STI57N65M5

Manufacturer No:
STI57N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 42A I2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STI57N65M5 is an N-channel Power MOSFET manufactured by STMicroelectronics. This device is based on the innovative MDmesh™ V vertical process technology combined with the well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STI57N65M5 particularly suitable for applications requiring high power and superior efficiency.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)650V
Gate-Source Voltage (VGS)± 25V
Drain Current (ID) Continuous at TC = 25 °C42A
Drain Current (ID) Continuous at TC = 100 °C28A
Static Drain-Source On-Resistance (RDS(on))0.056 (typ.), 0.063 (max.)Ω
Gate Threshold Voltage (VGS(th))3 - 5V
PackageI²PAK
PackingTube
RoHS CompliantEcopack2

Key Features

  • Extremely low on-resistance (RDS(on)) of 0.056 Ω (typ.) and 0.063 Ω (max.)
  • Higher VDSS rating and high dv/dt capability
  • Excellent switching performance
  • Easy to drive due to low gate charge and input capacitance
  • 100% avalanche tested

Applications

The STI57N65M5 is particularly suited for switching applications that require high power and superior efficiency. These include but are not limited to:

  • Flyback converters
  • LED lighting
  • Other high-power switching applications

Q & A

  1. What is the drain-source voltage rating of the STI57N65M5?
    The drain-source voltage (VDS) rating is 650 V.
  2. What is the typical on-resistance of the STI57N65M5?
    The typical on-resistance (RDS(on)) is 0.056 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 42 A.
  4. What package types are available for the STI57N65M5?
    The STI57N65M5 is available in the I²PAK package.
  5. Is the STI57N65M5 RoHS compliant?
    Yes, the STI57N65M5 is RoHS compliant with an Ecopack2 designation.
  6. What are the key features of the STI57N65M5?
    The key features include extremely low on-resistance, higher VDSS rating, high dv/dt capability, excellent switching performance, and being 100% avalanche tested.
  7. What are the typical applications for the STI57N65M5?
    The typical applications include switching applications such as flyback converters and LED lighting.
  8. What is the gate threshold voltage range of the STI57N65M5?
    The gate threshold voltage (VGS(th)) range is 3 to 5 V.
  9. How is the STI57N65M5 packaged?
    The STI57N65M5 is packaged in tubes.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage (VGS) is ± 25 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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