STB31N65M5
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STMicroelectronics STB31N65M5

Manufacturer No:
STB31N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 22A D2PAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STB31N65M5 is an N-channel power MOSFET from STMicroelectronics, part of the MDmesh M5 series. This device combines innovative vertical and horizontal PowerMESH technologies to offer high performance and efficiency. It is designed for use in high-voltage applications, providing a robust solution for power conversion systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))0.124 Ohm (typ.)
Drain Current (Id)22 A
PackageD2PAK
Operating Temperature Range-55°C to 150°C

Key Features

  • High voltage rating of 650 V, making it suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 0.124 Ohm, enhancing efficiency and reducing power losses.
  • High drain current of 22 A, supporting high-power applications.
  • D2PAK package, offering a compact and thermally efficient design.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environments.

Applications

  • Switch-Mode Power Supplies (SMPS)
  • Data Centers
  • Solar Microinverters
  • High-Power Conversion Systems
  • Industrial Power Supplies

Q & A

  1. What is the voltage rating of the STB31N65M5?
    The voltage rating of the STB31N65M5 is 650 V.
  2. What is the typical on-resistance (Rds(on)) of the STB31N65M5?
    The typical on-resistance (Rds(on)) is 0.124 Ohm.
  3. What is the maximum drain current of the STB31N65M5?
    The maximum drain current is 22 A.
  4. In which package is the STB31N65M5 available?
    The STB31N65M5 is available in a D2PAK package.
  5. What is the operating temperature range of the STB31N65M5?
    The operating temperature range is from -55°C to 150°C.
  6. What technology is used in the STB31N65M5?
    The STB31N65M5 uses the MDmesh M5 innovative vertical process technology combined with PowerMESH horizontal technology.
  7. What are some common applications of the STB31N65M5?
    Common applications include Switch-Mode Power Supplies (SMPS), data centers, solar microinverters, and high-power conversion systems.
  8. Is the STB31N65M5 suitable for high-power applications?
    Yes, the STB31N65M5 is designed for high-power applications due to its high voltage rating and current handling capabilities.
  9. What are the benefits of using the MDmesh M5 technology in the STB31N65M5?
    The MDmesh M5 technology offers high efficiency, low on-resistance, and excellent switching performance.
  10. Where can I find detailed specifications and datasheets for the STB31N65M5?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as on distributor sites like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1865 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB31N65M5 STB34N65M5 STB38N65M5 STB35N65M5 STB32N65M5 STB21N65M5 STB30N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 28A (Tc) 30A (Tc) 27A (Tc) 24A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V 110mOhm @ 14A, 10V 95mOhm @ 15A, 10V 98mOhm @ 13.5A, 10V 119mOhm @ 12A, 10V 190mOhm @ 8.5A, 10V 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 62.5 nC @ 10 V 71 nC @ 10 V 83 nC @ 10 V 72 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1865 pF @ 100 V 2700 pF @ 100 V 3000 pF @ 100 V 3750 pF @ 100 V 3320 pF @ 100 V 1950 pF @ 100 V 2880 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 150W (Tc) 125W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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