STMicroelectronics STB35N65M5

Manufacturer No:: STB35N65M5
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 650V 27A D2PAK
Delivery:
Payment:

Product Introduction

Overview

The STB35N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it particularly suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter	Value	Unit
V_DS (Drain-Source Voltage)	650	V
R_DS(on) (On-Resistance)	0.085	Ω
I_D (Drain Current)	27	A
V_GS (Gate-Source Voltage)	±25	V
Package	D2PAK
Operating Temperature	-55 to 150	°C
RoHS Compliance	Ecopack2

Key Features

Worldwide best R_DS(on) area
Higher V_DSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability

Applications

The STB35N65M5 is optimized for high-power PFC (Power Factor Correction) and PWM (Pulse Width Modulation) topologies in hard switching applications. It is particularly suited for use in:

Switch Mode Power Supplies (SMPS)
Data centers
Solar microinverters

Q & A

What is the maximum drain-source voltage of the STB35N65M5?
The maximum drain-source voltage (V_DS) is 650 V.
What is the on-resistance (R_DS(on)) of the STB35N65M5?
The on-resistance (R_DS(on)) is 0.085 Ω.
What is the maximum drain current (I_D) of the STB35N65M5?
The maximum drain current (I_D) is 27 A.
What is the gate-source voltage (V_GS) range for the STB35N65M5?
The gate-source voltage (V_GS) range is ±25 V.
In what package is the STB35N65M5 available?
The STB35N65M5 is available in the D2PAK package.
What are the operating temperature ranges for the STB35N65M5?
The operating temperature range is -55 to 150 °C.
Is the STB35N65M5 RoHS compliant?
Yes, the STB35N65M5 is RoHS compliant with an Ecopack2 rating.
What are some typical applications for the STB35N65M5?
Typical applications include Switch Mode Power Supplies (SMPS), data centers, and solar microinverters.
What makes the STB35N65M5 stand out in terms of performance?
The STB35N65M5 stands out due to its extremely low on-resistance and excellent switching performance.
Is the STB35N65M5 easy to drive?
Yes, the STB35N65M5 is designed to be easy to drive.

In Stock

UnitPrice: $7.63

Quantity: 100

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Part Number	STB35N65M5	STB45N65M5	STB38N65M5	STB30N65M5	STB31N65M5	STB32N65M5	STB34N65M5
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V	650 V	650 V	650 V	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)	35A (Tc)	30A (Tc)	22A (Tc)	22A (Tc)	24A (Tc)	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	98mOhm @ 13.5A, 10V	78mOhm @ 19.5A, 10V	95mOhm @ 15A, 10V	139mOhm @ 11A, 10V	148mOhm @ 11A, 10V	119mOhm @ 12A, 10V	110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V	91 nC @ 10 V	71 nC @ 10 V	64 nC @ 10 V	45 nC @ 10 V	72 nC @ 10 V	62.5 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	3750 pF @ 100 V	3375 pF @ 100 V	3000 pF @ 100 V	2880 pF @ 100 V	1865 pF @ 100 V	3320 pF @ 100 V	2700 pF @ 100 V
FET Feature	-	-	-	-	-	-	-
Power Dissipation (Max)	160W (Tc)	210W (Tc)	190W (Tc)	140W (Tc)	150W (Tc)	150W (Tc)	190W (Tc)
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	D²PAK (TO-263)	D²PAK (TO-263)	D2PAK	D²PAK (TO-263)	D2PAK	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	83 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	3750 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	160W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB35N65M5

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

STF35N65M5

STP35N65M5

STW35N65M5

STI35N65M5

Similar Products

Related Product By Categories

Related Product By Brand