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STB35N65M5
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STMicroelectronics STB35N65M5

Manufacturer No:
STB35N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 27A D2PAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STB35N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it particularly suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.085 Ω
ID (Drain Current) 27 A
VGS (Gate-Source Voltage) ±25 V
Package D2PAK
Operating Temperature -55 to 150 °C
RoHS Compliance Ecopack2

Key Features

  • Worldwide best RDS(on) area
  • Higher VDSS rating
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
  • High dv/dt capability

Applications

The STB35N65M5 is optimized for high-power PFC (Power Factor Correction) and PWM (Pulse Width Modulation) topologies in hard switching applications. It is particularly suited for use in:

  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STB35N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the on-resistance (RDS(on)) of the STB35N65M5?

    The on-resistance (RDS(on)) is 0.085 Ω.

  3. What is the maximum drain current (ID) of the STB35N65M5?

    The maximum drain current (ID) is 27 A.

  4. What is the gate-source voltage (VGS) range for the STB35N65M5?

    The gate-source voltage (VGS) range is ±25 V.

  5. In what package is the STB35N65M5 available?

    The STB35N65M5 is available in the D2PAK package.

  6. What are the operating temperature ranges for the STB35N65M5?

    The operating temperature range is -55 to 150 °C.

  7. Is the STB35N65M5 RoHS compliant?

    Yes, the STB35N65M5 is RoHS compliant with an Ecopack2 rating.

  8. What are some typical applications for the STB35N65M5?

    Typical applications include Switch Mode Power Supplies (SMPS), data centers, and solar microinverters.

  9. What makes the STB35N65M5 stand out in terms of performance?

    The STB35N65M5 stands out due to its extremely low on-resistance and excellent switching performance.

  10. Is the STB35N65M5 easy to drive?

    Yes, the STB35N65M5 is designed to be easy to drive.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3750 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB35N65M5 STB45N65M5 STB38N65M5 STB30N65M5 STB31N65M5 STB32N65M5 STB34N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 35A (Tc) 30A (Tc) 22A (Tc) 22A (Tc) 24A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 13.5A, 10V 78mOhm @ 19.5A, 10V 95mOhm @ 15A, 10V 139mOhm @ 11A, 10V 148mOhm @ 11A, 10V 119mOhm @ 12A, 10V 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V 91 nC @ 10 V 71 nC @ 10 V 64 nC @ 10 V 45 nC @ 10 V 72 nC @ 10 V 62.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 100 V 3375 pF @ 100 V 3000 pF @ 100 V 2880 pF @ 100 V 1865 pF @ 100 V 3320 pF @ 100 V 2700 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 160W (Tc) 210W (Tc) 190W (Tc) 140W (Tc) 150W (Tc) 150W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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