STMicroelectronics STB32N65M5

Manufacturer No:: STB32N65M5
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 650V 24A D2PAK
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Product Introduction

Overview

The STB32N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	650 V
R_DS(on) (On-State Resistance)	0.095 Ω
I_D (Drain Current)	24 A
P_tot (Total Power Dissipation)	Varies with package and conditions
T_j (Junction Temperature)	-40°C to 150°C
Package	D2PAK

Key Features

High voltage rating of 650 V, making it suitable for high-power applications.
Low on-state resistance (R_DS(on)) of 0.095 Ω, reducing power losses.
High drain current (I_D) of 24 A, supporting demanding power requirements.
MDmesh M5 technology for improved performance and reliability.
D2PAK package for efficient heat dissipation and compact design.

Applications

Power supplies and DC-DC converters.
Motor control and drive systems.
Industrial automation and control systems.
Aerospace and defense applications requiring high reliability.
Renewable energy systems, such as solar and wind power.

Q & A

What is the maximum drain-source voltage of the STB32N65M5?
The maximum drain-source voltage (V_DS) is 650 V.
What is the on-state resistance (R_DS(on)) of the STB32N65M5?
The on-state resistance (R_DS(on)) is 0.095 Ω.
What is the maximum drain current (I_D) of the STB32N65M5?
The maximum drain current (I_D) is 24 A.
What package is the STB32N65M5 available in?
The STB32N65M5 is available in the D2PAK package.
What technology is used in the STB32N65M5?
The STB32N65M5 uses the MDmesh M5 technology.
What are the typical applications of the STB32N65M5?
Typical applications include power supplies, motor control, industrial automation, aerospace, and renewable energy systems.
What is the junction temperature range of the STB32N65M5?
The junction temperature range is -40°C to 150°C.
How does the MDmesh M5 technology benefit the STB32N65M5?
The MDmesh M5 technology improves performance and reliability by reducing on-state resistance and enhancing thermal management.
Is the STB32N65M5 suitable for high-power applications?
Yes, the STB32N65M5 is suitable for high-power applications due to its high voltage and current ratings.
Where can I find detailed specifications for the STB32N65M5?
Detailed specifications can be found on the STMicroelectronics official website or through datasheet documents available from authorized distributors like Digi-Key, Mouser, etc.

In Stock

UnitPrice: $10.75

Quantity: 67

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Same Series

Part Number	STB32N65M5	STB42N65M5	STB34N65M5	STB38N65M5	STB35N65M5	STB30N65M5	STB31N65M5
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V	650 V	650 V	650 V	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)	33A (Tc)	28A (Tc)	30A (Tc)	27A (Tc)	22A (Tc)	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	119mOhm @ 12A, 10V	79mOhm @ 16.5A, 10V	110mOhm @ 14A, 10V	95mOhm @ 15A, 10V	98mOhm @ 13.5A, 10V	139mOhm @ 11A, 10V	148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V	100 nC @ 10 V	62.5 nC @ 10 V	71 nC @ 10 V	83 nC @ 10 V	64 nC @ 10 V	45 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	3320 pF @ 100 V	4650 pF @ 100 V	2700 pF @ 100 V	3000 pF @ 100 V	3750 pF @ 100 V	2880 pF @ 100 V	1865 pF @ 100 V
FET Feature	-	-	-	-	-	-	-
Power Dissipation (Max)	150W (Tc)	190W (Tc)	190W (Tc)	190W (Tc)	160W (Tc)	140W (Tc)	150W (Tc)
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	D2PAK	D²PAK (TO-263)	D²PAK (TO-263)	D2PAK	D2PAK	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	119mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	72 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	3320 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB32N65M5

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

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