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STB32N65M5
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STMicroelectronics STB32N65M5

Manufacturer No:
STB32N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 24A D2PAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STB32N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.095 Ω
ID (Drain Current) 24 A
Ptot (Total Power Dissipation) Varies with package and conditions
Tj (Junction Temperature) -40°C to 150°C
Package D2PAK

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.095 Ω, reducing power losses.
  • High drain current (ID) of 24 A, supporting demanding power requirements.
  • MDmesh M5 technology for improved performance and reliability.
  • D2PAK package for efficient heat dissipation and compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the STB32N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the on-state resistance (RDS(on)) of the STB32N65M5?

    The on-state resistance (RDS(on)) is 0.095 Ω.

  3. What is the maximum drain current (ID) of the STB32N65M5?

    The maximum drain current (ID) is 24 A.

  4. What package is the STB32N65M5 available in?

    The STB32N65M5 is available in the D2PAK package.

  5. What technology is used in the STB32N65M5?

    The STB32N65M5 uses the MDmesh M5 technology.

  6. What are the typical applications of the STB32N65M5?

    Typical applications include power supplies, motor control, industrial automation, aerospace, and renewable energy systems.

  7. What is the junction temperature range of the STB32N65M5?

    The junction temperature range is -40°C to 150°C.

  8. How does the MDmesh M5 technology benefit the STB32N65M5?

    The MDmesh M5 technology improves performance and reliability by reducing on-state resistance and enhancing thermal management.

  9. Is the STB32N65M5 suitable for high-power applications?

    Yes, the STB32N65M5 is suitable for high-power applications due to its high voltage and current ratings.

  10. Where can I find detailed specifications for the STB32N65M5?

    Detailed specifications can be found on the STMicroelectronics official website or through datasheet documents available from authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:119mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB32N65M5 STB42N65M5 STB34N65M5 STB38N65M5 STB35N65M5 STB30N65M5 STB31N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 33A (Tc) 28A (Tc) 30A (Tc) 27A (Tc) 22A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V 79mOhm @ 16.5A, 10V 110mOhm @ 14A, 10V 95mOhm @ 15A, 10V 98mOhm @ 13.5A, 10V 139mOhm @ 11A, 10V 148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 100 nC @ 10 V 62.5 nC @ 10 V 71 nC @ 10 V 83 nC @ 10 V 64 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3320 pF @ 100 V 4650 pF @ 100 V 2700 pF @ 100 V 3000 pF @ 100 V 3750 pF @ 100 V 2880 pF @ 100 V 1865 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 140W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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