STF18N65M5
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STMicroelectronics STF18N65M5

Manufacturer No:
STF18N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 15A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF18N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, leveraging the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 198 (typ.), 220 (max.)
ID (Drain Current, continuous at TC = 25 °C) 15 A
ID (Drain Current, continuous at TC = 100 °C) 9.4 A
IDM (Drain Current, pulsed) 60 A
VGS (Gate-Source Voltage) ±25 V
Tstg (Storage Temperature Range) -55 to 150 °C
TJ (Operating Junction Temperature Range) -55 to 150 °C
RthJC (Thermal Resistance, Junction-to-Case) 1.14 °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 50 °C/W

Key Features

  • Extremely low RDS(on)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested

Applications

The STF18N65M5 is particularly suited for high-power switching applications, including but not limited to:

  • Power Factor Correction (PFC)
  • Pulse Width Modulation (PWM) topologies in hard switching applications
  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STF18N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STF18N65M5?

    The typical on-resistance (RDS(on)) is 198 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 15 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±25 V.

  5. What are the storage and operating temperature ranges?

    The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C.

  6. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RthJC) is 1.14 °C/W.

  7. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RthJA) is 50 °C/W when mounted on a 1 inch² FR-4, 2 Oz copper board.

  8. What are some key applications for the STF18N65M5?

    Key applications include PFC, PWM topologies, SMPS, data centers, and solar microinverters.

  9. Is the STF18N65M5 100% avalanche tested?

    Yes, the STF18N65M5 is 100% avalanche tested.

  10. What package type is the STF18N65M5 available in?

    The STF18N65M5 is available in a DPAK (TO-252) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF18N65M5 STF38N65M5 STF11N65M5 STF12N65M5 STF15N65M5 STF16N65M5 STF18N55M5 STF18N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 550 V 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 30A (Tc) 9A (Tc) 8.5A (Tc) 11A (Tc) 12A (Tc) 16A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 7.5A, 10V 95mOhm @ 15A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 192mOhm @ 8A, 10V 330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 71 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 100 V 3000 pF @ 100 V 644 pF @ 100 V 900 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 1260 pF @ 100 V 770 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 25W (Tc) 35W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-5 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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