STF18N65M5
  • Share:

STMicroelectronics STF18N65M5

Manufacturer No:
STF18N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 15A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF18N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, leveraging the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 198 (typ.), 220 (max.)
ID (Drain Current, continuous at TC = 25 °C) 15 A
ID (Drain Current, continuous at TC = 100 °C) 9.4 A
IDM (Drain Current, pulsed) 60 A
VGS (Gate-Source Voltage) ±25 V
Tstg (Storage Temperature Range) -55 to 150 °C
TJ (Operating Junction Temperature Range) -55 to 150 °C
RthJC (Thermal Resistance, Junction-to-Case) 1.14 °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 50 °C/W

Key Features

  • Extremely low RDS(on)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested

Applications

The STF18N65M5 is particularly suited for high-power switching applications, including but not limited to:

  • Power Factor Correction (PFC)
  • Pulse Width Modulation (PWM) topologies in hard switching applications
  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STF18N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STF18N65M5?

    The typical on-resistance (RDS(on)) is 198 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 15 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±25 V.

  5. What are the storage and operating temperature ranges?

    The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C.

  6. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RthJC) is 1.14 °C/W.

  7. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RthJA) is 50 °C/W when mounted on a 1 inch² FR-4, 2 Oz copper board.

  8. What are some key applications for the STF18N65M5?

    Key applications include PFC, PWM topologies, SMPS, data centers, and solar microinverters.

  9. Is the STF18N65M5 100% avalanche tested?

    Yes, the STF18N65M5 is 100% avalanche tested.

  10. What package type is the STF18N65M5 available in?

    The STF18N65M5 is available in a DPAK (TO-252) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Same Series
STI18N65M5
STI18N65M5
MOSFET N CH 650V 15A I2PAK
STW18N65M5
STW18N65M5
MOSFET N-CH 650V 15A TO247
STP18N65M5
STP18N65M5
MOSFET N-CH 650V 15A TO220

Similar Products

Part Number STF18N65M5 STF38N65M5 STF11N65M5 STF12N65M5 STF15N65M5 STF16N65M5 STF18N55M5 STF18N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 550 V 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 30A (Tc) 9A (Tc) 8.5A (Tc) 11A (Tc) 12A (Tc) 16A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 7.5A, 10V 95mOhm @ 15A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 192mOhm @ 8A, 10V 330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 71 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 100 V 3000 pF @ 100 V 644 pF @ 100 V 900 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 1260 pF @ 100 V 770 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 25W (Tc) 35W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-5 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA