Overview
The 2N7002, produced by onsemi, is an N-Channel enhancement mode Field Effect Transistor (FET) designed using proprietary, high cell density, DMOS technology. This MOSFET is optimized to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is suitable for low-voltage, low-current applications and can handle DC currents up to 400 mA and pulsed currents up to 2 A.
Key Specifications
| Parameter | Symbol | Min | Max | Unit | Conditions | |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 60 | V | VGS = 0 V, ID = 10 µA |
| Drain-Source Breakdown Voltage | VBVDSS | - | - | 60 | V | VGS = 0 V, ID = 10 µA |
| Gate-Source Threshold Voltage | VGS(th) | 1.0 | - | 2.5 | V | VDS = VGS, ID = 250 µA |
| Maximum Drain Current - Continuous | ID | - | - | 200 | mA | VGS = 10 V, TC = 25°C |
| Maximum Drain Current - Pulsed | ID | - | - | 1500 | mA | VGS = 10 V, TC = 25°C |
| Static Drain-Source On-Resistance | RDS(on) | 1.2 | - | 7.5 | Ω | VGS = 10 V, ID = 500 mA |
| Maximum Power Dissipation | PD | - | - | 300 | mW | Derated above 25°C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | - | 150 | °C | - |
Key Features
- High Density Cell Design for Low RDS(on): Optimized for low on-state resistance, enhancing efficiency in switching applications.
- Voltage Controlled Small Signal Switch: Suitable for applications requiring precise voltage control.
- Rugged and Reliable: Designed to provide durable and dependable performance in various environments.
- High Saturation Current Capability: Can handle high current levels, making it versatile for different applications.
- ESD Protection Level: Offers HBM > 100 V and CDM > 2 kV protection, ensuring robustness against electrostatic discharge.
- Pb-Free and Halogen Free: Compliant with environmental regulations, making it a sustainable choice.
- Fast Switching Speed: Enables quick and efficient switching, ideal for high-speed applications.
- Low Input Capacitance: Minimizes input capacitance, which is beneficial for high-frequency applications.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
- Power MOSFET Gate Drivers: Used to drive the gates of power MOSFETs efficiently.
- Logic Level Translators: Suitable for translating logic levels in digital circuits.
- High-Speed Line Drivers: Used in applications requiring fast switching speeds.
- Other Switching Applications: General-purpose use in various switching applications due to its versatility.
Q & A
- What is the maximum drain-source voltage of the 2N7002 MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the typical gate-source threshold voltage of the 2N7002?
The typical gate-source threshold voltage (VGS(th)) is between 1.0 V and 2.5 V.
- What is the maximum continuous drain current of the 2N7002?
The maximum continuous drain current (ID) is 200 mA.
- What is the maximum pulsed drain current of the 2N7002?
The maximum pulsed drain current (ID) is 1500 mA.
- What is the typical static drain-source on-resistance of the 2N7002?
The typical static drain-source on-resistance (RDS(on)) is between 1.2 Ω and 7.5 Ω.
- What is the maximum power dissipation of the 2N7002?
The maximum power dissipation (PD) is 300 mW, derated above 25°C.
- What is the operating and storage temperature range of the 2N7002?
The operating and storage temperature range is -55°C to 150°C.
- Does the 2N7002 have ESD protection?
Yes, the 2N7002 has ESD protection with HBM > 100 V and CDM > 2 kV.
- Is the 2N7002 Pb-Free and Halogen Free?
Yes, the 2N7002 is Pb-Free and Halogen Free.
- What are some common applications of the 2N7002?
Common applications include small servo motor control, power MOSFET gate drivers, logic level translators, and high-speed line drivers.
