NDS7002A
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onsemi NDS7002A

Manufacturer No:
NDS7002A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS7002A is an N-Channel enhancement mode field effect transistor (FET) produced by ON Semiconductor using their proprietary high cell density DMOS technology. This transistor is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter 2N7000 2N7002 NDS7002A Unit
VDSS (Drain-Source Voltage) 60 60 60 V
VDGR (Drain-Gate Voltage) 60 60 60 V
VGSS (Gate-Source Voltage) - Continuous ±20 ±20 ±20 V
VGSS (Gate-Source Voltage) - Non Repetitive (tp < 50 ms) ±40 ±40 ±40 V
ID (Maximum Drain Current) - Continuous 200 115 280 mA
ID (Maximum Drain Current) - Pulsed 500 800 1500 mA
PD (Maximum Power Dissipation) 400 200 300 mW
TJ, TSTG (Operating and Storage Temperature Range) -55 to 150 -65 to 150 -65 to 150 °C
VGS(th) (Gate Threshold Voltage) 0.8 - 2.1 1 - 2.1 1 - 2.1 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 - 5 1.2 - 7.5 1.2 - 2 Ω

Key Features

  • High Density Cell Design: Minimizes on-state resistance for efficient performance.
  • Voltage Controlled Small Signal Switch: Suitable for voltage-controlled switching applications.
  • Rugged and Reliable: Ensures durable and dependable operation.
  • High Saturation Current Capability: Supports high current levels.
  • ESD Protection: Offers HBM > 100 V and CDM > 2 kV protection.
  • Pb-Free and Halogen Free: Compliant with environmental regulations.

Applications

  • Low-Voltage, Low-Current Applications: Ideal for small servo motor control, power MOSFET gate drivers, and other switching applications.
  • General Switching: Suitable for various switching circuits where low on-state resistance and fast switching are required.
  • Automotive and Industrial Control Systems: Can be used in control systems that require reliable and efficient switching performance.

Q & A

  1. What is the maximum drain-source voltage (VDSS) for the NDS7002A?

    The maximum drain-source voltage (VDSS) for the NDS7002A is 60 V.

  2. What is the continuous maximum drain current (ID) for the NDS7002A?

    The continuous maximum drain current (ID) for the NDS7002A is 280 mA.

  3. What is the gate threshold voltage (VGS(th)) range for the NDS7002A?

    The gate threshold voltage (VGS(th)) range for the NDS7002A is 1 to 2.1 V.

  4. What is the typical on-state resistance (RDS(on)) for the NDS7002A?

    The typical on-state resistance (RDS(on)) for the NDS7002A is 1.2 Ω.

  5. Does the NDS7002A have ESD protection? 100 V and CDM > 2 kV.

  6. Is the NDS7002A Pb-Free and Halogen Free?
  7. What are some common applications for the NDS7002A?

    The NDS7002A is commonly used in low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  8. What is the operating temperature range for the NDS7002A?

    The operating temperature range for the NDS7002A is -65 to 150°C.

  9. What is the maximum power dissipation for the NDS7002A?

    The maximum power dissipation for the NDS7002A is 300 mW.

  10. What is the forward transconductance (gFS) for the NDS7002A?

    The forward transconductance (gFS) for the NDS7002A is 80 to 320 mS.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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