NDS7002A_D87Z
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onsemi NDS7002A_D87Z

Manufacturer No:
NDS7002A_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS7002A_D87Z is an N-channel enhancement mode field effect transistor (FET) produced by onsemi. This device utilizes onsemi’s proprietary, high cell density, DMOS technology to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Value Unit
VDSS (Drain-to-Source Voltage) 60 V
VDGR (Drain-Gate Voltage) 60 V
VGSS (Gate-Source Voltage) - Continuous ±20 V
VGSS (Gate-Source Voltage) - Non Repetitive (tp < 50 ms) ±40 V
ID (Maximum Drain Current) - Continuous 280 mA
ID (Maximum Drain Current) - Pulsed 1500 mA
PD (Maximum Power Dissipation) 300 mW
TJ, TSTG (Operating and Storage Temperature Range) −65 to 150 °C
VGS(th) (Gate Threshold Voltage) 1 to 2.5 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 to 2 Ω
VDS(on) (Drain-Source On-Voltage) 0.6 to 1 V

Key Features

  • High Density Cell Design for Low RDS(on)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV
  • Pb-Free and Halogen Free

Applications

The NDS7002A_D87Z is particularly suited for low-voltage, low-current applications such as:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) for the NDS7002A_D87Z?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous gate-source voltage (VGSS) rating for this device?

    The continuous gate-source voltage (VGSS) rating is ±20 V.

  3. What is the maximum continuous drain current (ID) for the NDS7002A_D87Z?

    The maximum continuous drain current (ID) is 280 mA.

  4. What is the maximum power dissipation (PD) for this device?

    The maximum power dissipation (PD) is 300 mW.

  5. What is the operating and storage temperature range for the NDS7002A_D87Z?

    The operating and storage temperature range is −65 to 150°C.

  6. What is the typical gate threshold voltage (VGS(th)) for this device?

    The typical gate threshold voltage (VGS(th)) is between 1 to 2.5 V.

  7. What is the static drain-source on-resistance (RDS(on)) for the NDS7002A_D87Z?

    The static drain-source on-resistance (RDS(on)) is between 1.2 to 2 Ω.

  8. Does the NDS7002A_D87Z have ESD protection? 100 V and CDM > 2 kV.

  9. What are some common applications for the NDS7002A_D87Z?

    Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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