NDS7002A_D87Z
  • Share:

onsemi NDS7002A_D87Z

Manufacturer No:
NDS7002A_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS7002A_D87Z is an N-channel enhancement mode field effect transistor (FET) produced by onsemi. This device utilizes onsemi’s proprietary, high cell density, DMOS technology to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Value Unit
VDSS (Drain-to-Source Voltage) 60 V
VDGR (Drain-Gate Voltage) 60 V
VGSS (Gate-Source Voltage) - Continuous ±20 V
VGSS (Gate-Source Voltage) - Non Repetitive (tp < 50 ms) ±40 V
ID (Maximum Drain Current) - Continuous 280 mA
ID (Maximum Drain Current) - Pulsed 1500 mA
PD (Maximum Power Dissipation) 300 mW
TJ, TSTG (Operating and Storage Temperature Range) −65 to 150 °C
VGS(th) (Gate Threshold Voltage) 1 to 2.5 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 to 2 Ω
VDS(on) (Drain-Source On-Voltage) 0.6 to 1 V

Key Features

  • High Density Cell Design for Low RDS(on)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV
  • Pb-Free and Halogen Free

Applications

The NDS7002A_D87Z is particularly suited for low-voltage, low-current applications such as:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) for the NDS7002A_D87Z?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous gate-source voltage (VGSS) rating for this device?

    The continuous gate-source voltage (VGSS) rating is ±20 V.

  3. What is the maximum continuous drain current (ID) for the NDS7002A_D87Z?

    The maximum continuous drain current (ID) is 280 mA.

  4. What is the maximum power dissipation (PD) for this device?

    The maximum power dissipation (PD) is 300 mW.

  5. What is the operating and storage temperature range for the NDS7002A_D87Z?

    The operating and storage temperature range is −65 to 150°C.

  6. What is the typical gate threshold voltage (VGS(th)) for this device?

    The typical gate threshold voltage (VGS(th)) is between 1 to 2.5 V.

  7. What is the static drain-source on-resistance (RDS(on)) for the NDS7002A_D87Z?

    The static drain-source on-resistance (RDS(on)) is between 1.2 to 2 Ω.

  8. Does the NDS7002A_D87Z have ESD protection? 100 V and CDM > 2 kV.

  9. What are some common applications for the NDS7002A_D87Z?

    Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
162

Please send RFQ , we will respond immediately.

Same Series
2N7000BU
2N7000BU
MOSFET N-CH 60V 200MA TO92-3
2N7000
2N7000
MOSFET N-CHANNEL 60V 200MA TO92
NDS7002A
NDS7002A
MOSFET N-CH 60V 280MA SOT-23
2N7000TA
2N7000TA
MOSFET N-CH 60V 200MA TO92-3
2N7000-D75Z
2N7000-D75Z
MOSFET N-CH 60V 200MA TO92-3
2N7000-D26Z
2N7000-D26Z
MOSFET N-CH 60V 200MA TO92-3
2N7000-D74Z
2N7000-D74Z
MOSFET N-CH 60V 200MA TO92-3
2N7002_L99Z
2N7002_L99Z
MOSFET N-CH 60V 115MA SOT-23
2N7002_S00Z
2N7002_S00Z
MOSFET N-CH 60V 115MA SOT-23
2N7002_NB9G002
2N7002_NB9G002
MOSFET N-CH 60V 115MA SOT-23
NDS7002A_D87Z
NDS7002A_D87Z
MOSFET N-CH 60V 280MA SOT-23
NDS7002A_NB9GGTXA
NDS7002A_NB9GGTXA
MOSFET N-CH 60V 280MA SOT-23

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP