BSS84
  • Share:

MDD BSS84

Manufacturer No:
BSS84
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
MOSFET SOT-23 P Channel 50V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84 is a P-Channel Enhancement Mode Field-Effect Transistor produced using high cell density DMOS technology. This transistor is known for its low on-state resistance, rugged and reliable performance, and fast switching capabilities. It is particularly suited for low-voltage applications requiring a low-current high-side switch and can deliver currents up to 0.52 A, with a continuous drain current of up to 0.13 A.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)-50V
Gate-Source Voltage (VGS)±20V
Drain Current (ID) - Continuous-0.13A
Drain Current (ID) - Pulsed-0.52A
RDS(ON) Max @VGS=-5V10Ω
Gate Threshold Voltage (VGS(th)) Min-0.9V
Gate Threshold Voltage (VGS(th)) Max-2V
Junction Temperature (Tj) Max150°C
Input Capacitance (Ciss)73pF
Output Capacitance (Coss)10pF

Key Features

  • Voltage-Controlled P-Channel Small-Signal Switch
  • High-Density Cell Design for Low RDS(ON)
  • High Saturation Current
  • Rugged and Reliable Performance
  • Fast Switching Capabilities
  • Pb-Free and Halogen-Free Package

Applications

The BSS84 is suitable for a variety of low-voltage applications that require a low-current high-side switch. These include but are not limited to:

  • Low-Voltage Power Management
  • High-Side Switching Applications
  • Small-Signal Switching
  • General Purpose Analog and Digital Circuits

Q & A

  1. What is the maximum drain-source voltage of the BSS84?
    The maximum drain-source voltage (VDS) of the BSS84 is -50 V.
  2. What is the maximum continuous drain current of the BSS84?
    The maximum continuous drain current (ID) of the BSS84 is -0.13 A.
  3. What is the typical RDS(ON) at VGS = -5V for the BSS84?
    The typical RDS(ON) at VGS = -5V for the BSS84 is 10 Ω.
  4. What is the junction temperature range for the BSS84?
    The junction temperature range for the BSS84 is -55°C to +150°C.
  5. Is the BSS84 Pb-Free and Halogen-Free?
    Yes, the BSS84 is Pb-Free and Halogen-Free.
  6. What is the maximum power dissipation of the BSS84?
    The maximum power dissipation (PD) of the BSS84 is 0.36 W.
  7. What is the input capacitance (Ciss) of the BSS84?
    The input capacitance (Ciss) of the BSS84 is 73 pF.
  8. What are some common applications of the BSS84?
    The BSS84 is commonly used in low-voltage power management, high-side switching applications, small-signal switching, and general-purpose analog and digital circuits.
  9. What is the gate threshold voltage range for the BSS84?
    The gate threshold voltage (VGS(th)) range for the BSS84 is -0.9 V to -2 V.
  10. What package types are available for the BSS84?
    The BSS84 is available in SOT-23-3 packages.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.18
1,902

Please send RFQ , we will respond immediately.

Same Series
BSS84_D87Z
BSS84_D87Z
MOSFET P-CH 50V 130MA SOT23-3

Similar Products

Part Number BSS84 BSS84W
Manufacturer MDD Taiwan Semiconductor Corporation
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 60 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 10V 8Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.77 nC @ 10 V 1.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 5 V 37 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 225mW (Ta) 298mW (Ta)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

SM712
SM712
MDD
TVS DIODE 12V/7V, 20V/12V SOT23
1N4148W T4
1N4148W T4
MDD
SWITCHING SOD-123, 100V
BAV21W
BAV21W
MDD
SWITCHING 250V 250MA SOD-123
1N4007WS
1N4007WS
MDD
RECTIFIER DIODE 1KV 1A SOD-323
1N4007-T/B
1N4007-T/B
MDD
General Diode DO-41 1KV 1A
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
S8050
S8050
MDD
TRANS NPN 25V 0.5A SOT23
BC848B
BC848B
MDD
TRANS NPN 30V 0.1A SOT23
SS8050
SS8050
MDD
TRANS NPN 25V 1.5A SOT23
BC846B
BC846B
MDD
TRANS NPN 65V 0.1A SOT23
2N7002K
2N7002K
MDD
MOSFET SOT-23 N Channel 60V
BSS84
BSS84
MDD
MOSFET SOT-23 P Channel 50V