BSS84
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MDD BSS84

Manufacturer No:
BSS84
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
MOSFET SOT-23 P Channel 50V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84 is a P-Channel Enhancement Mode Field-Effect Transistor produced using high cell density DMOS technology. This transistor is known for its low on-state resistance, rugged and reliable performance, and fast switching capabilities. It is particularly suited for low-voltage applications requiring a low-current high-side switch and can deliver currents up to 0.52 A, with a continuous drain current of up to 0.13 A.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)-50V
Gate-Source Voltage (VGS)±20V
Drain Current (ID) - Continuous-0.13A
Drain Current (ID) - Pulsed-0.52A
RDS(ON) Max @VGS=-5V10Ω
Gate Threshold Voltage (VGS(th)) Min-0.9V
Gate Threshold Voltage (VGS(th)) Max-2V
Junction Temperature (Tj) Max150°C
Input Capacitance (Ciss)73pF
Output Capacitance (Coss)10pF

Key Features

  • Voltage-Controlled P-Channel Small-Signal Switch
  • High-Density Cell Design for Low RDS(ON)
  • High Saturation Current
  • Rugged and Reliable Performance
  • Fast Switching Capabilities
  • Pb-Free and Halogen-Free Package

Applications

The BSS84 is suitable for a variety of low-voltage applications that require a low-current high-side switch. These include but are not limited to:

  • Low-Voltage Power Management
  • High-Side Switching Applications
  • Small-Signal Switching
  • General Purpose Analog and Digital Circuits

Q & A

  1. What is the maximum drain-source voltage of the BSS84?
    The maximum drain-source voltage (VDS) of the BSS84 is -50 V.
  2. What is the maximum continuous drain current of the BSS84?
    The maximum continuous drain current (ID) of the BSS84 is -0.13 A.
  3. What is the typical RDS(ON) at VGS = -5V for the BSS84?
    The typical RDS(ON) at VGS = -5V for the BSS84 is 10 Ω.
  4. What is the junction temperature range for the BSS84?
    The junction temperature range for the BSS84 is -55°C to +150°C.
  5. Is the BSS84 Pb-Free and Halogen-Free?
    Yes, the BSS84 is Pb-Free and Halogen-Free.
  6. What is the maximum power dissipation of the BSS84?
    The maximum power dissipation (PD) of the BSS84 is 0.36 W.
  7. What is the input capacitance (Ciss) of the BSS84?
    The input capacitance (Ciss) of the BSS84 is 73 pF.
  8. What are some common applications of the BSS84?
    The BSS84 is commonly used in low-voltage power management, high-side switching applications, small-signal switching, and general-purpose analog and digital circuits.
  9. What is the gate threshold voltage range for the BSS84?
    The gate threshold voltage (VGS(th)) range for the BSS84 is -0.9 V to -2 V.
  10. What package types are available for the BSS84?
    The BSS84 is available in SOT-23-3 packages.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84
BSS84
MOSFET SOT-23 P Channel 50V

Similar Products

Part Number BSS84 BSS84W
Manufacturer MDD Taiwan Semiconductor Corporation
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 60 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 10V 8Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.77 nC @ 10 V 1.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 5 V 37 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 225mW (Ta) 298mW (Ta)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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