BSS84W
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Taiwan Semiconductor Corporation BSS84W

Manufacturer No:
BSS84W
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
-60, -0.14, SINGLE P-CHANNEL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84W is a P-Channel Enhancement Mode Field Effect Transistor (FET) produced by Taiwan Semiconductor Corporation. This MOSFET is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speeds, making it suitable for a variety of power management and switching applications. It is packaged in a SOT-323 format, which is compact and suitable for surface mount technology. The device is fully RoHS compliant, halogen and antimony free, and meets the requirements for automotive applications under AEC-Q100/101/200 standards.

Key Specifications

Parameter Symbol Value Unit Conditions
Drain-Source Voltage VDSS -50 V VGS = 0V
Drain-Gate Voltage VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current Continuous ID -130 mA
Pulsed Drain Current IDM -1 A
Total Power Dissipation PD 200 mW TA = 25°C
Thermal Resistance, Junction to Ambient JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(TH) -0.8 to -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS(ON) 6 to 10 Ω VGS = -5V, ID = -0.1A

Key Features

  • Low On-Resistance: The BSS84W offers a low on-state resistance, which is crucial for high efficiency in power management applications.
  • Low Gate Threshold Voltage: This feature ensures that the MOSFET can be easily turned on with a low gate voltage, enhancing its switching performance.
  • Low Input Capacitance: Reduces the gate drive requirements and improves the overall switching speed.
  • Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental standards and is suitable for use in a wide range of applications, including automotive.
  • Halogen and Antimony Free: A “green” device that adheres to stringent environmental regulations).

Applications

  • General Purpose Interfacing Switch: Suitable for various switching applications due to its fast switching speed and low on-resistance).
  • Power Management Functions: Ideal for high efficiency power management in devices and systems).
  • Analog Switch: Can be used in analog switching applications where low on-resistance and fast switching are critical).
  • Automotive Applications: Qualified to AEC-Q100/101/200 standards, making it suitable for automotive power management and switching needs).

Q & A

  1. What is the maximum drain-source voltage of the BSS84W MOSFET?

    The maximum drain-source voltage (VDSS) is -50V.

  2. What is the typical on-resistance of the BSS84W?

    The typical static drain-source on-resistance (RDS(ON)) is 6 to 10 Ω at VGS = -5V and ID = -0.1A).

  3. What is the maximum continuous drain current of the BSS84W?

    The maximum continuous drain current (ID) is -130 mA).

  4. What is the thermal resistance from junction to ambient for the BSS84W?

    The thermal resistance from junction to ambient (RθJA) is 625 °C/W).

  5. Is the BSS84W RoHS compliant?

    Yes, the BSS84W is totally lead-free and fully RoHS compliant).

  6. What are the operating and storage temperature ranges for the BSS84W?

    The operating and storage temperature range is -55 to +150 °C).

  7. What package type is the BSS84W available in?

    The BSS84W is available in a SOT-323 package).

  8. Is the BSS84W suitable for automotive applications?

    Yes, it is qualified to AEC-Q100/101/200 standards, making it suitable for automotive applications).

  9. What are some key applications of the BSS84W?

    Key applications include general purpose interfacing, power management functions, analog switching, and automotive applications).

  10. What are the benefits of the low gate threshold voltage in the BSS84W?

    The low gate threshold voltage ensures that the MOSFET can be easily turned on with a low gate voltage, enhancing its switching performance).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:37 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):298mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS84W BSS84 BSS84PW
Manufacturer Taiwan Semiconductor Corporation MDD Infineon Technologies
Product Status Active Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 50 V 60 V
Current - Continuous Drain (Id) @ 25°C 140mA (Ta) 130mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 140mA, 10V 8Ohm @ 100mA, 10V 8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 10 V 1.77 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 37 pF @ 30 V 30 pF @ 5 V 19.1 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 298mW (Ta) 225mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 PG-SOT323
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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