Overview
The BSS84W is a P-Channel Enhancement Mode Field Effect Transistor (FET) produced by Taiwan Semiconductor Corporation. This MOSFET is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speeds, making it suitable for a variety of power management and switching applications. It is packaged in a SOT-323 format, which is compact and suitable for surface mount technology. The device is fully RoHS compliant, halogen and antimony free, and meets the requirements for automotive applications under AEC-Q100/101/200 standards.
Key Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -50 | V | VGS = 0V |
| Drain-Gate Voltage | VDGR | -50 | V | |
| Gate-Source Voltage Continuous | VGSS | ±20 | V | |
| Drain Current Continuous | ID | -130 | mA | |
| Pulsed Drain Current | IDM | -1 | A | |
| Total Power Dissipation | PD | 200 | mW | TA = 25°C |
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Gate Threshold Voltage | VGS(TH) | -0.8 to -2.0 | V | VDS = VGS, ID = -1mA |
| Static Drain-Source On-Resistance | RDS(ON) | 6 to 10 | Ω | VGS = -5V, ID = -0.1A |
Key Features
- Low On-Resistance: The BSS84W offers a low on-state resistance, which is crucial for high efficiency in power management applications.
- Low Gate Threshold Voltage: This feature ensures that the MOSFET can be easily turned on with a low gate voltage, enhancing its switching performance.
- Low Input Capacitance: Reduces the gate drive requirements and improves the overall switching speed.
- Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental standards and is suitable for use in a wide range of applications, including automotive.
- Halogen and Antimony Free: A “green” device that adheres to stringent environmental regulations).
Applications
- General Purpose Interfacing Switch: Suitable for various switching applications due to its fast switching speed and low on-resistance).
- Power Management Functions: Ideal for high efficiency power management in devices and systems).
- Analog Switch: Can be used in analog switching applications where low on-resistance and fast switching are critical).
- Automotive Applications: Qualified to AEC-Q100/101/200 standards, making it suitable for automotive power management and switching needs).
Q & A
- What is the maximum drain-source voltage of the BSS84W MOSFET?
The maximum drain-source voltage (VDSS) is -50V.
- What is the typical on-resistance of the BSS84W?
The typical static drain-source on-resistance (RDS(ON)) is 6 to 10 Ω at VGS = -5V and ID = -0.1A).
- What is the maximum continuous drain current of the BSS84W?
The maximum continuous drain current (ID) is -130 mA).
- What is the thermal resistance from junction to ambient for the BSS84W?
The thermal resistance from junction to ambient (RθJA) is 625 °C/W).
- Is the BSS84W RoHS compliant?
Yes, the BSS84W is totally lead-free and fully RoHS compliant).
- What are the operating and storage temperature ranges for the BSS84W?
The operating and storage temperature range is -55 to +150 °C).
- What package type is the BSS84W available in?
The BSS84W is available in a SOT-323 package).
- Is the BSS84W suitable for automotive applications?
Yes, it is qualified to AEC-Q100/101/200 standards, making it suitable for automotive applications).
- What are some key applications of the BSS84W?
Key applications include general purpose interfacing, power management functions, analog switching, and automotive applications).
- What are the benefits of the low gate threshold voltage in the BSS84W?
The low gate threshold voltage ensures that the MOSFET can be easily turned on with a low gate voltage, enhancing its switching performance).
