BSS84_D87Z
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onsemi BSS84_D87Z

Manufacturer No:
BSS84_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84_D87Z, produced by onsemi, is a P-channel enhancement-mode field-effect transistor (FET) designed using onsemi’s proprietary high cell density DMOS technology. This technology minimizes on-state resistance, providing rugged and reliable performance along with fast switching capabilities. The BSS84 is suitable for a wide range of applications, particularly those requiring low-voltage and low-current high-side switching.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Conditions
Drain-Source Voltage VDSS -50 V VGS = 0 V, ID = -250 μA
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID -0.13 A
Pulsed Drain Current ID -0.52 A
Maximum Power Dissipation PD 0.36 W Derate Above 25°C
Drain-Source On-Resistance RDS(on) 10 Ω VGS = -5 V, ID = -0.10 A
Input Capacitance Ciss 73 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance Coss 10 pF
Reverse Transfer Capacitance Crss 5 pF
Gate Resistance Rg 9 Ω VGS = 15 mV, f = 1.0 MHz

Key Features

  • Voltage-Controlled P-Channel Small-Signal Switch: The BSS84 operates as a voltage-controlled switch, making it suitable for various switching applications.
  • High-Density Cell Design for Low RDS(on): The high cell density DMOS technology minimizes on-state resistance, ensuring efficient operation.
  • High Saturation Current: The device can handle up to 0.52 A of pulsed current and 0.13 A of continuous current.
  • Fast Switching Speed: The BSS84 features fast turn-on and turn-off times, making it ideal for high-frequency applications.
  • Low Input Capacitance: Low input capacitance reduces the gate drive requirements.
  • Pb-Free and Halogen Free: The device is environmentally friendly, adhering to RoHS standards.

Applications

  • Low-Voltage Applications: The BSS84 is particularly suited for low-voltage applications requiring a low-current high-side switch.
  • Power Management Functions: It is used in power management circuits for efficient switching and control.
  • General Purpose Interfacing Switch: The device can be used as a general-purpose switch in various electronic circuits.
  • Analog Switches: Its low on-resistance and fast switching make it suitable for analog switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BSS84?

    The maximum drain-source voltage (VDSS) is -50 V.

  2. What is the continuous drain current rating of the BSS84?

    The continuous drain current (ID) is -0.13 A.

  3. What is the typical on-state resistance (RDS(on)) of the BSS84?

    The typical on-state resistance (RDS(on)) is 10 Ω at VGS = -5 V.

  4. What is the maximum power dissipation of the BSS84?

    The maximum power dissipation (PD) is 0.36 W, derating above 25°C.

  5. What is the input capacitance of the BSS84?

    The input capacitance (Ciss) is 73 pF at VDS = -25 V, VGS = 0 V, and f = 1.0 MHz.

  6. Is the BSS84 Pb-Free and Halogen Free?

    Yes, the BSS84 is Pb-Free and Halogen Free.

  7. What is the typical turn-on delay time of the BSS84?

    The typical turn-on delay time (td(on)) is 2.5 to 5.0 ns.

  8. What are the common applications of the BSS84?

    The BSS84 is commonly used in low-voltage applications, power management functions, general-purpose interfacing switches, and analog switches.

  9. What is the gate-source voltage range for the BSS84?

    The gate-source voltage (VGSS) range is ±20 V.

  10. What is the operating junction temperature range for the BSS84?

    The operating junction temperature range is -55°C to +150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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