SS8050
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MDD SS8050

Manufacturer No:
SS8050
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
TRANS NPN 25V 1.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SS8050 is an NPN epitaxial silicon transistor produced by MDD. It is designed for general-purpose applications and is particularly suited for high-current capacity in compact packages. This transistor is complementary to the SS8550 and is widely used in various electronic circuits, including output amplifiers in portable radios operating in Class B push-pull configuration.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 1.5 A
Collector Power Dissipation PC 0.3 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 to 150 °C
Transition Frequency fT 100 MHz
Forward Current Transfer Ratio (hFE) hFE 85 ~ 300
Package SOT-23, TO-92

Key Features

  • High collector current capacity of up to 1.5 A.
  • Complementary to SS8550, making it suitable for push-pull amplifier configurations.
  • Epitaxial planar design for high stability and reliability.
  • Pb-Free and Halogen-Free/BFR-Free, compliant with EU RoHS 2002/95/EC directives.
  • Available in SOT-23 and TO-92 packages, offering compact and versatile mounting options.
  • High transition frequency of 100 MHz, suitable for high-frequency applications.

Applications

  • Output amplifiers in portable radios operating in Class B push-pull configuration.
  • General-purpose switching and amplification in electronic circuits.
  • High-current applications requiring compact packaging.
  • Audio amplifiers and other high-frequency applications.

Q & A

  1. What is the maximum collector current of the SS8050 transistor?

    The maximum collector current of the SS8050 transistor is 1.5 A.

  2. What are the typical packages available for the SS8050 transistor?

    The SS8050 transistor is available in SOT-23 and TO-92 packages.

  3. What is the maximum collector-emitter voltage of the SS8050 transistor?

    The maximum collector-emitter voltage of the SS8050 transistor is 25 V.

  4. Is the SS8050 transistor RoHS compliant?

    Yes, the SS8050 transistor is Pb-Free, Halogen-Free/BFR-Free, and compliant with EU RoHS 2002/95/EC directives.

  5. What is the transition frequency of the SS8050 transistor?

    The transition frequency of the SS8050 transistor is 100 MHz.

  6. What is the maximum junction temperature of the SS8050 transistor?

    The maximum junction temperature of the SS8050 transistor is 150 °C.

  7. What are some common applications of the SS8050 transistor?

    The SS8050 transistor is commonly used in output amplifiers of portable radios, general-purpose switching, and high-frequency applications.

  8. Is the SS8050 transistor complementary to any other transistor model?

    Yes, the SS8050 transistor is complementary to the SS8550 transistor.

  9. What is the storage temperature range for the SS8050 transistor?

    The storage temperature range for the SS8050 transistor is -65 to 150 °C.

  10. What is the forward current transfer ratio (hFE) range of the SS8050 transistor?

    The forward current transfer ratio (hFE) range of the SS8050 transistor is 85 to 300.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number SS8050 SS8550
Manufacturer MDD MDD
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 300 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

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