PHT4NQ10T,135
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Nexperia USA Inc. PHT4NQ10T,135

Manufacturer No:
PHT4NQ10T,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHT4NQ10T,135 is a metal oxide semiconductor field-effect transistor (MOSFET) produced by Nexperia USA Inc. This N-Channel MOSFET is widely used in various electronic devices and integrated circuits due to its ability to amplify or switch electronic signals efficiently. It operates by using gate voltage to control the current flowing between the source and drain electrodes, making it a fundamental component in modern electronic products.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 3.5 A
On Resistance (Rds On) @ Id, Vgs 250 mΩ @ 1.75A, 10V
Gate Charge (Qg) @ Vgs 7.4 nC @ 10V nC
Input Capacitance (Ciss) @ Vds 300 pF @ 25V pF
Maximum Power Dissipation (Pd) @ Tc 6.9 W W
Maximum Gate Voltage (Vgs) ±20 V V
Threshold Voltage (Vgs(th)) @ Id 4 V @ 1 mA V
Operating Temperature Range (TJ) -65°C to 150°C °C
Package Type SOT-223
RoHS Status Lead Free / RoHS Compliant

Key Features

  • Voltage Resistance: The PHT4NQ10T,135 has a drain to source voltage (Vdss) of up to 100V, ensuring it can withstand high voltage shocks and maintain safe circuit operation.
  • Current Handling: It has a continuous drain current (Id) of 3.5A at 25°C, making it suitable for high current load applications such as motor drives and power supplies.
  • Low On Resistance: The MOSFET features a low on resistance (Rds On) of 250 mΩ at 1.75A and 10V, which helps in reducing energy consumption and heat in the circuit.
  • Fast Switching: With a gate charge (Qg) of 7.4 nC at 10V, it enables fast and efficient switching operations.
  • Input Capacitance: The input capacitance (Ciss) is 300 pF at 25V, which helps in improving the operating frequency of the circuit and reducing noise.
  • Wide Operating Temperature Range: The device operates within a temperature range of -65°C to 150°C, making it adaptable to various application scenarios.
  • Package and Packaging: It uses the SOT-223 surface mount package and is available in Tape & Reel (TR) standard packaging, which is convenient for integration into various circuits and mass production.

Applications

  • Motor Control: Used in motor control circuits for applications like variable frequency drives (VFDs), robotics, and electric vehicles to control the speed and direction of electric motors.
  • Switching Devices: Utilized as switching devices in digital and analog circuits for efficient control of electronic signals in applications such as data switches and multiplexers.
  • Power Management: Employed in power management systems to handle high current and voltage requirements efficiently.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PHT4NQ10T,135 MOSFET?

    The maximum drain to source voltage (Vdss) is 100V.

  2. What is the continuous drain current (Id) of the PHT4NQ10T,135 at 25°C?

    The continuous drain current (Id) at 25°C is 3.5A.

  3. What is the on resistance (Rds On) of the PHT4NQ10T,135?

    The on resistance (Rds On) is 250 mΩ at 1.75A and 10V.

  4. What is the gate charge (Qg) of the PHT4NQ10T,135?

    The gate charge (Qg) is 7.4 nC at 10V.

  5. What is the input capacitance (Ciss) of the PHT4NQ10T,135?

    The input capacitance (Ciss) is 300 pF at 25V.

  6. What is the maximum power dissipation (Pd) of the PHT4NQ10T,135?

    The maximum power dissipation (Pd) is 6.9 W.

  7. What is the maximum gate voltage (Vgs) of the PHT4NQ10T,135?

    The maximum gate voltage (Vgs) is ±20 V.

  8. What is the threshold voltage (Vgs(th)) of the PHT4NQ10T,135?

    The threshold voltage (Vgs(th)) is 4 V at 1 mA.

  9. What is the operating temperature range of the PHT4NQ10T,135?

    The operating temperature range is -65°C to 150°C.

  10. What package type does the PHT4NQ10T,135 use?

    The package type is SOT-223.

  11. Is the PHT4NQ10T,135 RoHS compliant?

    Yes, the PHT4NQ10T,135 is Lead Free and RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):6.9W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number PHT4NQ10T,135 PHT6NQ10T,135 PHT2NQ10T,135 PHT4NQ10LT,135
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 3A (Ta) 2.5A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 5V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.75A, 10V 90mOhm @ 3A, 10V 430mOhm @ 1.75A, 10V 250mOhm @ 1.75A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V 21 nC @ 10 V 5.1 nC @ 10 V 12.2 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V 633 pF @ 25 V 160 pF @ 25 V 374 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 6.9W (Tc) 1.8W (Ta), 8.3W (Tc) 6.25W (Tc) 6.9W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SC-73 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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