BC80740E6327
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Infineon Technologies BC80740E6327

Manufacturer No:
BC80740E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40 E6327 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC807 series, known for its reliability and versatility in various electronic applications. The BC807-40 E6327 is housed in a compact SOT-23 package, making it ideal for space-constrained designs. It is designed for general-purpose use, including switching and amplifier applications, particularly in audio frequency (AF) stages and driver circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 0.5 A
Peak Collector Current ICM 1.0 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation Ptot 330 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
DC Current Gain (hFE) hFE 160 - 400 -
Collector-Emitter Saturation Voltage VCEsat 0.7 V
Base-Emitter Saturation Voltage VBEsat 1.2 V

Key Features

  • Ideally suited for automatic insertion due to its SOT-23 package.
  • Epitaxial planar die construction for high reliability and performance.
  • Complementary NPN types available (BC817).
  • High current gain (hFE) ranging from 160 to 400.
  • Low collector-emitter saturation voltage (VCEsat) of 0.7 V).
  • Totally lead-free and fully RoHS compliant, halogen and antimony free).
  • Qualified according to AEC Q101 for automotive applications).

Applications

  • Switching and audio frequency (AF) amplifier applications).
  • Driver circuits in various electronic devices).
  • Automotive applications requiring specific change control and qualified to AEC Q100/101/200).
  • General-purpose use in electronic circuits where a reliable PNP transistor is required).

Q & A

  1. What is the collector-emitter voltage rating of the BC807-40 E6327?

    The collector-emitter voltage rating is 45 V).

  2. What is the continuous collector current of the BC807-40 E6327?

    The continuous collector current is 0.5 A).

  3. What is the peak collector current of the BC807-40 E6327?

    The peak collector current is 1.0 A).

  4. What is the DC current gain (hFE) range of the BC807-40 E6327?

    The DC current gain (hFE) ranges from 160 to 400).

  5. Is the BC807-40 E6327 RoHS compliant?
  6. What are the typical applications of the BC807-40 E6327?

    The BC807-40 E6327 is typically used in switching and AF amplifier applications, as well as in driver circuits and automotive applications).

  7. What is the junction temperature range of the BC807-40 E6327?

    The junction temperature range is -65 to 150 °C).

  8. What is the package type of the BC807-40 E6327?

    The BC807-40 E6327 is housed in a SOT-23 package).

  9. Is the BC807-40 E6327 suitable for automatic insertion?
  10. What are the complementary NPN types available for the BC807-40 E6327?

    The complementary NPN types available are BC817).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC80740E6327 BC807-40E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11

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