BC807-40E6327
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Infineon Technologies BC807-40E6327

Manufacturer No:
BC807-40E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40E6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is part of the BC807 series, known for its general-purpose applications. It is a PNP transistor, meaning it is a type of BJT that uses a positive charge carrier (holes) as the primary charge carrier.

Although the BC807-40E6327 is listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA -
Current - Collector (Ic) (Max) 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V -
Current - Collector Cutoff (Max) 200 nA
Frequency - Transition 100 MHz
Power - Max 300 mW
Operating Temperature -55°C ~ 150°C (TJ) -
Package / Case SOT-23 -
Mounting Type Surface Mount -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Key Features

  • General Purpose Transistor: Suitable for a wide range of applications requiring a PNP transistor.
  • High Collector Current: Supports up to 500 mA, making it suitable for applications requiring moderate current handling.
  • Low Vce Saturation: Ensures minimal voltage drop when the transistor is in saturation, reducing power losses.
  • High Frequency Capability: With a transition frequency of 100 MHz, it is suitable for high-frequency applications.
  • Compact Package: Available in the SOT-23 package, which is ideal for space-constrained designs.
  • Broad Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for use in various environmental conditions.

Applications

  • Amplifier Circuits: Can be used in amplifier circuits where a PNP transistor is required.
  • Switching Circuits: Suitable for switching applications due to its high current handling and low Vce saturation.
  • Audio Circuits: Can be used in audio amplifiers and other audio-related circuits.
  • Automotive Electronics: Due to its robust operating temperature range, it can be used in automotive electronics.
  • Industrial Control Systems: Can be used in various industrial control systems requiring reliable and robust transistor performance.

Q & A

  1. What is the transistor type of the BC807-40E6327?

    The BC807-40E6327 is a PNP bipolar junction transistor (BJT).

  2. What is the maximum collector-emitter breakdown voltage of the BC807-40E6327?

    The maximum collector-emitter breakdown voltage is 45V.

  3. What is the maximum collector current of the BC807-40E6327?

    The maximum collector current is 500 mA.

  4. What is the package type of the BC807-40E6327?

    The BC807-40E6327 is available in the SOT-23 package.

  5. What is the operating temperature range of the BC807-40E6327?

    The operating temperature range is from -55°C to 150°C (TJ).

  6. Is the BC807-40E6327 RoHS compliant?

    Yes, the BC807-40E6327 is RoHS compliant in some versions, though there are also non-compliant versions available.

  7. What is the transition frequency of the BC807-40E6327?

    The transition frequency is 100 MHz.

  8. What is the maximum power dissipation of the BC807-40E6327?

    The maximum power dissipation is 300 mW.

  9. Is the BC807-40E6327 still in production?

    No, the BC807-40E6327 is listed as obsolete and no longer manufactured.

  10. What are some common applications of the BC807-40E6327?

    Common applications include amplifier circuits, switching circuits, audio circuits, automotive electronics, and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC807-40E6327 BC80740E6327 BC808-40E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 25 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 330 mW 330 mW 330 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11 PG-SOT23-3-11

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