BC860CWE6327
  • Share:

Infineon Technologies BC860CWE6327

Manufacturer No:
BC860CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860CWE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a SOT-323 (SC-70) surface-mount device (SMD) case, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)45V
Collector-base voltage (VCBO)50V
Emitter-base voltage (VEBO)5V
DC collector current (IC)100mA
Peak collector current (ICM)200mA
Total power dissipation (Ptot)250mW
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Transition frequency (fT)250MHz
PackageSOT-323 (SC-70)

Key Features

  • PNP Bipolar Junction Transistor: Suitable for general-purpose amplification and switching applications.
  • High Frequency Capability: Transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-323 (SC-70) surface-mount device for high-density designs.
  • Low Power Dissipation: Total power dissipation of 250 mW.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -65°C to 150°C.

Applications

The BC860CWE6327 is versatile and can be used in a variety of applications, including:

  • General-purpose amplification: Suitable for audio amplifiers, signal processing, and other general-purpose amplification tasks.
  • Switching circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
  • High-frequency circuits: Applicable in high-frequency amplifiers, oscillators, and other RF circuits due to its high transition frequency.
  • Automotive and industrial electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC860CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum DC collector current for the BC860CWE6327?
    The maximum DC collector current is 100 mA.
  3. What is the transition frequency of the BC860CWE6327?
    The transition frequency is 250 MHz.
  4. What is the package type of the BC860CWE6327?
    The package type is SOT-323 (SC-70).
  5. What is the total power dissipation of the BC860CWE6327?
    The total power dissipation is 250 mW.
  6. What is the junction temperature range for the BC860CWE6327?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the BC860CWE6327?
    The storage temperature range is from -65°C to 150°C.
  8. Can the BC860CWE6327 be used in high-frequency applications?
    Yes, it can be used in high-frequency applications due to its high transition frequency.
  9. Is the BC860CWE6327 suitable for automotive and industrial electronics?
    Yes, it is suitable for use in automotive and industrial electronic systems.
  10. What is the emitter-base voltage rating of the BC860CWE6327?
    The emitter-base voltage rating is 5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
10,890

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC860CWE6327 BC860CWH6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323-3-1 PG-SOT23

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BCP5316H6327XTSA1
BCP5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BSS83PE6327
BSS83PE6327
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FM24CL64B-GTR
FM24CL64B-GTR
Infineon Technologies
IC FRAM 64KBIT I2C 1MHZ 8SOIC
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA