BC860CWE6327
  • Share:

Infineon Technologies BC860CWE6327

Manufacturer No:
BC860CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860CWE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a SOT-323 (SC-70) surface-mount device (SMD) case, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)45V
Collector-base voltage (VCBO)50V
Emitter-base voltage (VEBO)5V
DC collector current (IC)100mA
Peak collector current (ICM)200mA
Total power dissipation (Ptot)250mW
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Transition frequency (fT)250MHz
PackageSOT-323 (SC-70)

Key Features

  • PNP Bipolar Junction Transistor: Suitable for general-purpose amplification and switching applications.
  • High Frequency Capability: Transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-323 (SC-70) surface-mount device for high-density designs.
  • Low Power Dissipation: Total power dissipation of 250 mW.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -65°C to 150°C.

Applications

The BC860CWE6327 is versatile and can be used in a variety of applications, including:

  • General-purpose amplification: Suitable for audio amplifiers, signal processing, and other general-purpose amplification tasks.
  • Switching circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
  • High-frequency circuits: Applicable in high-frequency amplifiers, oscillators, and other RF circuits due to its high transition frequency.
  • Automotive and industrial electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC860CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum DC collector current for the BC860CWE6327?
    The maximum DC collector current is 100 mA.
  3. What is the transition frequency of the BC860CWE6327?
    The transition frequency is 250 MHz.
  4. What is the package type of the BC860CWE6327?
    The package type is SOT-323 (SC-70).
  5. What is the total power dissipation of the BC860CWE6327?
    The total power dissipation is 250 mW.
  6. What is the junction temperature range for the BC860CWE6327?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the BC860CWE6327?
    The storage temperature range is from -65°C to 150°C.
  8. Can the BC860CWE6327 be used in high-frequency applications?
    Yes, it can be used in high-frequency applications due to its high transition frequency.
  9. Is the BC860CWE6327 suitable for automotive and industrial electronics?
    Yes, it is suitable for use in automotive and industrial electronic systems.
  10. What is the emitter-base voltage rating of the BC860CWE6327?
    The emitter-base voltage rating is 5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
10,890

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC860CWE6327 BC860CWH6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323-3-1 PG-SOT23

Related Product By Categories

BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS16B5000
BAS16B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCX56-16E6433
BCX56-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC860BWH6327XTSA1
BC860BWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCX5216H6327XTSA1
BCX5216H6327XTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BC 807-40 E6433
BC 807-40 E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC 857BT E6327
BC 857BT E6327
Infineon Technologies
TRANS PNP 45V 0.1A SC75
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
SAK-TC1796-256F150E BE
SAK-TC1796-256F150E BE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416BGA