BC860CWE6327
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Infineon Technologies BC860CWE6327

Manufacturer No:
BC860CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860CWE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a SOT-323 (SC-70) surface-mount device (SMD) case, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)45V
Collector-base voltage (VCBO)50V
Emitter-base voltage (VEBO)5V
DC collector current (IC)100mA
Peak collector current (ICM)200mA
Total power dissipation (Ptot)250mW
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Transition frequency (fT)250MHz
PackageSOT-323 (SC-70)

Key Features

  • PNP Bipolar Junction Transistor: Suitable for general-purpose amplification and switching applications.
  • High Frequency Capability: Transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-323 (SC-70) surface-mount device for high-density designs.
  • Low Power Dissipation: Total power dissipation of 250 mW.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -65°C to 150°C.

Applications

The BC860CWE6327 is versatile and can be used in a variety of applications, including:

  • General-purpose amplification: Suitable for audio amplifiers, signal processing, and other general-purpose amplification tasks.
  • Switching circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
  • High-frequency circuits: Applicable in high-frequency amplifiers, oscillators, and other RF circuits due to its high transition frequency.
  • Automotive and industrial electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC860CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum DC collector current for the BC860CWE6327?
    The maximum DC collector current is 100 mA.
  3. What is the transition frequency of the BC860CWE6327?
    The transition frequency is 250 MHz.
  4. What is the package type of the BC860CWE6327?
    The package type is SOT-323 (SC-70).
  5. What is the total power dissipation of the BC860CWE6327?
    The total power dissipation is 250 mW.
  6. What is the junction temperature range for the BC860CWE6327?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the BC860CWE6327?
    The storage temperature range is from -65°C to 150°C.
  8. Can the BC860CWE6327 be used in high-frequency applications?
    Yes, it can be used in high-frequency applications due to its high transition frequency.
  9. Is the BC860CWE6327 suitable for automotive and industrial electronics?
    Yes, it is suitable for use in automotive and industrial electronic systems.
  10. What is the emitter-base voltage rating of the BC860CWE6327?
    The emitter-base voltage rating is 5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC860CWE6327 BC860CWH6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323-3-1 PG-SOT23

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