BC860CWE6327
  • Share:

Infineon Technologies BC860CWE6327

Manufacturer No:
BC860CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860CWE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a SOT-323 (SC-70) surface-mount device (SMD) case, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)45V
Collector-base voltage (VCBO)50V
Emitter-base voltage (VEBO)5V
DC collector current (IC)100mA
Peak collector current (ICM)200mA
Total power dissipation (Ptot)250mW
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Transition frequency (fT)250MHz
PackageSOT-323 (SC-70)

Key Features

  • PNP Bipolar Junction Transistor: Suitable for general-purpose amplification and switching applications.
  • High Frequency Capability: Transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-323 (SC-70) surface-mount device for high-density designs.
  • Low Power Dissipation: Total power dissipation of 250 mW.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -65°C to 150°C.

Applications

The BC860CWE6327 is versatile and can be used in a variety of applications, including:

  • General-purpose amplification: Suitable for audio amplifiers, signal processing, and other general-purpose amplification tasks.
  • Switching circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
  • High-frequency circuits: Applicable in high-frequency amplifiers, oscillators, and other RF circuits due to its high transition frequency.
  • Automotive and industrial electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC860CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum DC collector current for the BC860CWE6327?
    The maximum DC collector current is 100 mA.
  3. What is the transition frequency of the BC860CWE6327?
    The transition frequency is 250 MHz.
  4. What is the package type of the BC860CWE6327?
    The package type is SOT-323 (SC-70).
  5. What is the total power dissipation of the BC860CWE6327?
    The total power dissipation is 250 mW.
  6. What is the junction temperature range for the BC860CWE6327?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the BC860CWE6327?
    The storage temperature range is from -65°C to 150°C.
  8. Can the BC860CWE6327 be used in high-frequency applications?
    Yes, it can be used in high-frequency applications due to its high transition frequency.
  9. Is the BC860CWE6327 suitable for automotive and industrial electronics?
    Yes, it is suitable for use in automotive and industrial electronic systems.
  10. What is the emitter-base voltage rating of the BC860CWE6327?
    The emitter-base voltage rating is 5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
10,890

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC860CWE6327 BC860CWH6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323-3-1 PG-SOT23

Related Product By Categories

BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF

Related Product By Brand

BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BCP5310E6327HTSA1
BCP5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS83PE6327
BSS83PE6327
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
BTS716GBXUMA1
BTS716GBXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
TLE4267GMXUMA2
TLE4267GMXUMA2
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-61