BC860CWE6327
  • Share:

Infineon Technologies BC860CWE6327

Manufacturer No:
BC860CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860CWE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a SOT-323 (SC-70) surface-mount device (SMD) case, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)45V
Collector-base voltage (VCBO)50V
Emitter-base voltage (VEBO)5V
DC collector current (IC)100mA
Peak collector current (ICM)200mA
Total power dissipation (Ptot)250mW
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Transition frequency (fT)250MHz
PackageSOT-323 (SC-70)

Key Features

  • PNP Bipolar Junction Transistor: Suitable for general-purpose amplification and switching applications.
  • High Frequency Capability: Transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-323 (SC-70) surface-mount device for high-density designs.
  • Low Power Dissipation: Total power dissipation of 250 mW.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -65°C to 150°C.

Applications

The BC860CWE6327 is versatile and can be used in a variety of applications, including:

  • General-purpose amplification: Suitable for audio amplifiers, signal processing, and other general-purpose amplification tasks.
  • Switching circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
  • High-frequency circuits: Applicable in high-frequency amplifiers, oscillators, and other RF circuits due to its high transition frequency.
  • Automotive and industrial electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC860CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum DC collector current for the BC860CWE6327?
    The maximum DC collector current is 100 mA.
  3. What is the transition frequency of the BC860CWE6327?
    The transition frequency is 250 MHz.
  4. What is the package type of the BC860CWE6327?
    The package type is SOT-323 (SC-70).
  5. What is the total power dissipation of the BC860CWE6327?
    The total power dissipation is 250 mW.
  6. What is the junction temperature range for the BC860CWE6327?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the BC860CWE6327?
    The storage temperature range is from -65°C to 150°C.
  8. Can the BC860CWE6327 be used in high-frequency applications?
    Yes, it can be used in high-frequency applications due to its high transition frequency.
  9. Is the BC860CWE6327 suitable for automotive and industrial electronics?
    Yes, it is suitable for use in automotive and industrial electronic systems.
  10. What is the emitter-base voltage rating of the BC860CWE6327?
    The emitter-base voltage rating is 5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
10,890

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC860CWE6327 BC860CWH6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323-3-1 PG-SOT23

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

BAW56SE6327BTSA1
BAW56SE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857BE6327
BC857BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX5316E6433HTMA1
BCX5316E6433HTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
IR2104STRPBF
IR2104STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
BTS4140NHUMA1
BTS4140NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC