Overview
The 2N7002BKM is a 60 V N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. The 2N7002BKM is designed for high-performance applications requiring fast switching and low on-resistance. Although the specific part number 2N7002BKM315 is noted, it is important to note that this part is currently discontinued and not recommended for new designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type number | 2N7002BKM | - |
Package version | DFN1006-3 | - |
Package name | SOT883 | - |
Product status | Not for design in (End-of-life) | - |
Channel type | N-channel | - |
Number of transistors | 1 | - |
VDS [max] | 60 | V |
RDSon [max] @ VGS = 10 V | 1.6 | Ω |
RDSon [max] @ VGS = 5 V | 2.0 | Ω |
Tj [max] | 150 | °C |
ID [max] | 0.45 | A |
QGD [typ] | 0.4 | nC |
QG(tot) [typ] @ VGS = 10 V | 1.2 | nC |
Ptot [max] | 0.715 | W |
VGSth [typ] | 1.6 | V |
Automotive qualified | No | - |
Ciss [typ] | 41 | pF |
Coss [typ] | 4 | pF |
Release date | 2011-01-24 | - |
Key Features
- Logic-level compatible: The 2N7002BKM is designed to operate with logic-level gate voltages, making it suitable for a wide range of digital and analog circuits.
- Very fast switching: This MOSFET features fast switching times, which is crucial for high-speed applications.
- Trench MOSFET technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
- ESD protection up to 2 kV: Provides robust electrostatic discharge protection, enhancing the device's reliability in harsh environments.
Applications
- Relay driver: Suitable for driving relays in various control systems.
- High-speed line driver: Ideal for applications requiring fast signal transmission.
- Low-side load switch: Can be used as a switch in low-side configurations for load management.
- Switching circuits: Applicable in various switching circuits where fast and efficient switching is required.
Q & A
- What is the maximum drain-source voltage (VDS) of the 2N7002BKM?
60 V
- What is the maximum continuous drain current (ID) of the 2N7002BKM?
0.45 A
- What is the typical gate-source threshold voltage (VGSth) of the 2N7002BKM?
1.6 V
- Does the 2N7002BKM have ESD protection?
- What is the package type of the 2N7002BKM?
DFN1006-3 (SOT883)
- Is the 2N7002BKM automotive qualified?
No
- What are the typical input and output capacitances (Ciss and Coss) of the 2N7002BKM?
Ciss: 41 pF, Coss: 4 pF
- What is the maximum junction temperature (Tj) of the 2N7002BKM?
150 °C
- What are some common applications of the 2N7002BKM?
Relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Is the 2N7002BKM still available for new designs?
No, it is discontinued and not recommended for new designs.