2N7002BKM315
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Nexperia USA Inc. 2N7002BKM315

Manufacturer No:
2N7002BKM315
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA 2N7002BKM - SMALL S
Delivery:
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Product Introduction

Overview

The 2N7002BKM is a 60 V N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. The 2N7002BKM is designed for high-performance applications requiring fast switching and low on-resistance. Although the specific part number 2N7002BKM315 is noted, it is important to note that this part is currently discontinued and not recommended for new designs.

Key Specifications

Parameter Value Unit
Type number 2N7002BKM -
Package version DFN1006-3 -
Package name SOT883 -
Product status Not for design in (End-of-life) -
Channel type N-channel -
Number of transistors 1 -
VDS [max] 60 V
RDSon [max] @ VGS = 10 V 1.6 Ω
RDSon [max] @ VGS = 5 V 2.0 Ω
Tj [max] 150 °C
ID [max] 0.45 A
QGD [typ] 0.4 nC
QG(tot) [typ] @ VGS = 10 V 1.2 nC
Ptot [max] 0.715 W
VGSth [typ] 1.6 V
Automotive qualified No -
Ciss [typ] 41 pF
Coss [typ] 4 pF
Release date 2011-01-24 -

Key Features

  • Logic-level compatible: The 2N7002BKM is designed to operate with logic-level gate voltages, making it suitable for a wide range of digital and analog circuits.
  • Very fast switching: This MOSFET features fast switching times, which is crucial for high-speed applications.
  • Trench MOSFET technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • ESD protection up to 2 kV: Provides robust electrostatic discharge protection, enhancing the device's reliability in harsh environments.

Applications

  • Relay driver: Suitable for driving relays in various control systems.
  • High-speed line driver: Ideal for applications requiring fast signal transmission.
  • Low-side load switch: Can be used as a switch in low-side configurations for load management.
  • Switching circuits: Applicable in various switching circuits where fast and efficient switching is required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002BKM?

    60 V

  2. What is the maximum continuous drain current (ID) of the 2N7002BKM?

    0.45 A

  3. What is the typical gate-source threshold voltage (VGSth) of the 2N7002BKM?

    1.6 V

  4. Does the 2N7002BKM have ESD protection?
  5. What is the package type of the 2N7002BKM?

    DFN1006-3 (SOT883)

  6. Is the 2N7002BKM automotive qualified?

    No

  7. What are the typical input and output capacitances (Ciss and Coss) of the 2N7002BKM?

    Ciss: 41 pF, Coss: 4 pF

  8. What is the maximum junction temperature (Tj) of the 2N7002BKM?

    150 °C

  9. What are some common applications of the 2N7002BKM?

    Relay driver, high-speed line driver, low-side load switch, and switching circuits.

  10. Is the 2N7002BKM still available for new designs?

    No, it is discontinued and not recommended for new designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number 2N7002BKM315 2N7002BKM,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 SOT-883
Package / Case SC-101, SOT-883 SC-101, SOT-883

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