Overview
The STB20NM60T4 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device combines the multiple drain process with STMicroelectronics' proprietary PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The STB20NM60T4 is available in the D²PAK package and is designed for high-efficiency switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C | 192 | W |
| Derating Factor | 1.5 | W/°C |
| Peak di/dt | 15 | V/ns |
| Insulation Withstand Voltage | 2500 | V |
| Storage Temperature | -65 to 150 | °C |
| Maximum Junction Temperature | 150 | °C |
| Thermal Resistance Junction-Case | 0.65 | °C/W |
| Thermal Resistance Junction-Ambient | 62.5 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | < 0.29 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Input Capacitance (Ciss) | 1500 | pF |
| Output Capacitance (Coss) | 350 | pF |
| Reverse Transfer Capacitance (Crss) | 35 | pF |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Advanced MDmesh™ technology for improved dynamic performance
- ECOPACK® packages with Lead-free second level interconnect
Applications
The STB20NM60T4 is designed for various high-efficiency switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial power systems
- Automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source voltage (VDS) of the STB20NM60T4?
The maximum drain-source voltage (VDS) is 600 V. - What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20 A. - What is the thermal resistance junction-case for the D²PAK package?
The thermal resistance junction-case for the D²PAK package is 0.65 °C/W. - What are the key features of the MDmesh™ technology used in the STB20NM60T4?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance. - What types of packages are available for the STB20NM60T4?
The STB20NM60T4 is available in the D²PAK package. - What is the maximum junction temperature for the STB20NM60T4?
The maximum junction temperature is 150 °C. - What is the derating factor for the total dissipation at TC = 25°C?
The derating factor is 1.5 W/°C. - What is the insulation withstand voltage from all three leads to the external heat sink?
The insulation withstand voltage is 2500 V. - What are some typical applications for the STB20NM60T4?
Typical applications include power supplies, DC-DC converters, motor control, industrial power systems, and automotive systems. - Does the STB20NM60T4 come in ECOPACK® packages?
Yes, the STB20NM60T4 is available in ECOPACK® packages with Lead-free second level interconnect.
