Overview
The STB20NM50T4 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device combines the Multiple Drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. It is designed for high-power switching applications and offers superior dynamic performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C | 192 | W |
| Derating Factor | 1.54 | W/°C |
| Peak diode recovery voltage slope (dv/dt) | 15 | V/ns |
| Insulation Withstand Voltage (VISO) | 2500 | V (RMS) |
| Operating Junction Temperature (Tj) | -65 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.65 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | < 0.25 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Input Capacitance (Ciss) | 1480 | pF |
| Output Capacitance (Coss) | 285 | pF |
| Reverse Transfer Capacitance (Crss) | 34 | pF |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Outstanding low on-resistance
- Excellent dynamic performances
- Available in TO-220, TO-220FP, D²PAK, and I²PAK packages
- ECOPACK® lead-free packages for environmental compliance
Applications
- Switching applications
- Power supplies and converters
- Motor control and drives
- High-power electronic devices
- Industrial and automotive systems (with appropriate usage guidelines)
Q & A
- What is the maximum drain-source voltage (VDS) of the STB20NM50T4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 20 A at 25°C and 12.6 A at 100°C.
- What is the thermal resistance junction-case (Rthj-case) for this MOSFET?
The thermal resistance junction-case (Rthj-case) is 0.65 °C/W.
- What are the key features of the MDmesh™ technology used in this MOSFET?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.
- In what packages is the STB20NM50T4 available?
The STB20NM50T4 is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.
- What is the gate threshold voltage (VGS(th)) range for this MOSFET?
The gate threshold voltage (VGS(th)) range is from 3 to 5 V.
- What is the maximum operating junction temperature (Tj) for this device?
The maximum operating junction temperature (Tj) is 150 °C.
- Is the STB20NM50T4 suitable for automotive applications?
While it can be used in automotive applications, it must be at the user's own risk if it is not specified as 'automotive grade'.
- What is the total dissipation at 25°C for this MOSFET?
The total dissipation at 25°C is 192 W.
- Does the STB20NM50T4 come in lead-free packages?
Yes, the STB20NM50T4 is available in ECOPACK® lead-free packages.
