Overview
The STP20NM50FP is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device combines the Multiple Drain process with ST's PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt capabilities, and excellent avalanche characteristics. The STP20NM50FP is designed for high-efficiency switching applications and is available in the TO-220FP package, which is lead-free and compliant with environmental standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (continuous) at TC = 25°C (ID) | 20 | A |
| Drain Current (continuous) at TC = 100°C (ID) | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C (PTOT) | 45 | W |
| Peak Diode Recovery Voltage Slope (dv/dt) | 15 | V/ns |
| Insulation Withstand Voltage (VISO) | 2500 | V |
| Operating Junction Temperature (Tj) | -65 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 2.8 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | < 0.25 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Outstanding low on-resistance
- Excellent dynamic performances
- Lead-free ECOPACK® packages for environmental compliance
Applications
The STP20NM50FP is primarily designed for high-efficiency switching applications, including:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- ZVS phase-shift converters, particularly in bridge topologies
Q & A
- What is the maximum drain-source voltage (VDS) of the STP20NM50FP?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20 A.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) is 2.8 °C/W.
- What are the key features of the MDmesh™ technology used in the STP20NM50FP?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.
- What is the maximum operating junction temperature (Tj) for the STP20NM50FP?
The maximum operating junction temperature (Tj) is 150 °C.
- What type of package is the STP20NM50FP available in?
The STP20NM50FP is available in the TO-220FP package.
- Is the STP20NM50FP compliant with environmental standards?
Yes, the STP20NM50FP is available in lead-free ECOPACK® packages, which comply with environmental standards.
- What are some typical applications for the STP20NM50FP?
Typical applications include power supplies, motor control and drives, high-frequency switching circuits, and ZVS phase-shift converters.
- What is the gate threshold voltage (VGS(th)) range for the STP20NM50FP?
The gate threshold voltage (VGS(th)) range is from 3 to 5 V.
- What is the maximum pulsed drain current (IDM) for the STP20NM50FP?
The maximum pulsed drain current (IDM) is 80 A.
