STP20NM50FD
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STMicroelectronics STP20NM50FD

Manufacturer No:
STP20NM50FD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 20A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP20NM50FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ family, known for its reduced on-resistance and fast switching capabilities. It is available in the TO-220 package and is designed to meet stringent environmental requirements, including lead-free second-level interconnects in ECOPACK® packages.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)500V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C20A
Continuous Drain Current (ID) at TC = 100°C14A
Pulsed Drain Current (IDM)80A
Static Drain-Source On Resistance (RDS(on))< 0.25Ω
Total Dissipation at TC = 25°C192W
Operating Junction Temperature (Tj)150°C
Storage Temperature (Tstg)-65 to 150°C

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Tight process control and high manufacturing yields
  • Intrinsic fast-recovery body diode, suitable for bridge topologies and ZVS phase-shift converters

Applications

The STP20NM50FD is highly suitable for various switching applications, particularly in bridge topologies such as Zero Voltage Switching (ZVS) phase-shift converters. Its fast switching and low on-resistance make it ideal for high-efficiency power conversion systems.

Q & A

  1. What is the maximum drain-source voltage of the STP20NM50FD?
    The maximum drain-source voltage (VDS) is 500 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 20 A at 25°C and 14 A at 100°C.
  3. What is the typical on-resistance of the STP20NM50FD?
    The typical static drain-source on resistance (RDS(on)) is less than 0.25 Ω.
  4. What are the package options for the STP20NM50FD?
    The device is available in TO-220, TO-220FP, and D²PAK packages.
  5. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150°C.
  6. Is the STP20NM50FD environmentally friendly?
    Yes, it is offered in ECOPACK® packages with lead-free second-level interconnects.
  7. What are the key features of the FDmesh™ technology?
    The FDmesh™ technology offers reduced on-resistance, fast switching, and an intrinsic fast-recovery body diode.
  8. What are the typical applications of the STP20NM50FD?
    It is typically used in switching applications, especially in bridge topologies and ZVS phase-shift converters.
  9. What is the total dissipation at 25°C?
    The total dissipation at 25°C is 192 W.
  10. What is the storage temperature range?
    The storage temperature range is from -65°C to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB20NM50FDT4
STB20NM50FDT4
MOSFET N-CH 500V 20A D2PAK

Similar Products

Part Number STP20NM50FD STP20NM60FD STP20NM50FP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 550 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V 290mOhm @ 10A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 37 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 25 V 1300 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 192W (Tc) 192W (Tc) 45W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220FP
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack

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