Overview
The STB20NM50FDT4 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This technology combines the Multiple Drain process with the company's PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The device is designed to offer superior dynamic performance, making it highly suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 14 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Static Drain-Source On Resistance (RDS(on)) | < 0.25 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.65 - 2.8 | °C/W |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Operating Junction Temperature (Tj) | 150 | °C |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
- Intrinsic fast-recovery body diode, suitable for bridge topologies and ZVS phase-shift converters
Applications
The STB20NM50FDT4 is primarily used in high-power switching applications, including but not limited to:
- Switching power supplies
- DC-DC converters
- Motor control and drive systems
- Industrial and automotive power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STB20NM50FDT4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at 25°C for the STB20NM50FDT4?
The continuous drain current (ID) at 25°C is 20 A.
- What are the key features of the MDmesh™ technology used in the STB20NM50FDT4?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.
- What are the typical applications of the STB20NM50FDT4?
The STB20NM50FDT4 is used in switching applications, including switching power supplies, DC-DC converters, motor control, and industrial and automotive power systems.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.65 °C/W.
- What is the maximum operating junction temperature (Tj) for the STB20NM50FDT4?
The maximum operating junction temperature (Tj) is 150 °C.
- Is the STB20NM50FDT4 100% avalanche tested?
Yes, the STB20NM50FDT4 is 100% avalanche tested.
- What is the gate threshold voltage (VGS(th)) range for the STB20NM50FDT4?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
- What are the available packages for the STB20NM50FDT4?
The STB20NM50FDT4 is available in TO-220, TO-220FP, and D²PAK packages.
- Is the STB20NM50FDT4 RoHS compliant?
Yes, the STB20NM50FDT4 is RoHS compliant and lead-free.
