Overview
The STP20NM60FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ family, known for its reduced on-resistance and fast switching capabilities. The STP20NM60FD is housed in a TO-220 package and is designed to handle high voltage and current applications. It features an intrinsic fast-recovery body diode, making it particularly suitable for bridge topologies, especially in Zero Voltage Switching (ZVS) phase-shift converters and other high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Static Drain-Source On Resistance (RDS(on)) | 0.26 - 0.29 | Ω |
| Total Dissipation at TC = 25°C (PTOT) | 192 | W |
| Thermal Resistance Junction-case (Rthj-case) | 0.65 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- High Voltage and Current Capability: The STP20NM60FD can handle up to 600V drain-source voltage and 20A continuous drain current, making it suitable for high-power applications.
- Low On-Resistance: With a typical on-resistance of 0.26Ω, this MOSFET minimizes power losses during operation.
- Fast Switching and Intrinsic Fast-Recovery Body Diode: The FDmesh™ technology ensures fast switching times and an intrinsic fast-recovery body diode, which is beneficial for high-frequency applications.
- High dv/dt and Avalanche Capabilities: The device is 100% avalanche tested and has high dv/dt capabilities, ensuring robust performance under various operating conditions.
- Low Input Capacitance and Gate Charge: This feature reduces the gate drive requirements and enhances switching efficiency.
- Tight Process Control and High Manufacturing Yields: Ensures consistent performance and reliability across different units.
Applications
- ZVS Phase-Shift Full Bridge Converters: Ideal for use in Zero Voltage Switching phase-shift full bridge converters, particularly in Switch-Mode Power Supplies (SMPS) and welding equipment.
- High-Power Switching Applications: Suitable for various high-power switching applications due to its high voltage, current, and switching speed capabilities.
Q & A
- What is the maximum drain-source voltage of the STP20NM60FD?
The maximum drain-source voltage (VDS) is 600V.
- What is the continuous drain current rating of the STP20NM60FD at 25°C?
The continuous drain current (ID) at 25°C is 20A.
- What is the typical on-resistance of the STP20NM60FD?
The typical static drain-source on-resistance (RDS(on)) is 0.26Ω.
- What package types are available for the STP20NM60FD?
The STP20NM60FD is available in TO-220, TO-220FP, and TO-247 packages.
- What are the key applications of the STP20NM60FD?
The STP20NM60FD is particularly suited for ZVS phase-shift full bridge converters in SMPS and welding equipment.
- What is the maximum gate-source voltage of the STP20NM60FD?
The maximum gate-source voltage (VGS) is ±30V.
- What is the thermal resistance junction-case of the STP20NM60FD in a TO-220 package?
The thermal resistance junction-case (Rthj-case) is 0.65°C/W.
- Is the STP20NM60FD 100% avalanche tested?
Yes, the STP20NM60FD is 100% avalanche tested).
- What is the typical forward transconductance of the STP20NM60FD?
The typical forward transconductance (gfs) is 9 S).
- What is the maximum lead temperature for soldering the STP20NM60FD?
The maximum lead temperature for soldering is 300°C).
