STW20NM60FD
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STMicroelectronics STW20NM60FD

Manufacturer No:
STW20NM60FD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW20NM60FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ family, known for its reduced on-resistance and fast switching capabilities, along with an intrinsic fast-recovery body diode. It is available in the TO-247 package and is designed to meet stringent environmental requirements, including Lead-free second level interconnects in ECOPACK® packages.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (continuous) at TC = 25°C (ID) 20 A
Drain Current (continuous) at TC = 100°C (ID) 12.6 A
Drain Current (pulsed) (IDM) 80 A
Total Dissipation at TC = 25°C (PTOT) 214 W
Static Drain-Source On-Resistance (RDS(on)) <0.29 Ω
Gate Threshold Voltage (VGS(th)) 3-5 V
Total Gate Charge (Qg) 37 nC
Rise Time (tr) 12 ns
Output Capacitance (Coss) 500 pF
Maximum Junction Temperature (Tj) 150 °C

Key Features

  • High dv/dt and avalanche capabilities
  • 100% Avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Tight process control and high manufacturing yields
  • Intrinsic fast-recovery body diode
  • ECOPACK® packages with Lead-free second level interconnects

Applications

The STW20NM60FD is strongly recommended for various switching applications, particularly in bridge topologies and ZVS phase-shift converters due to its fast switching and high dv/dt capabilities.

Q & A

  1. What is the maximum drain-source voltage of the STW20NM60FD?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 20 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is less than 0.29 Ω.

  4. What is the total gate charge (Qg) of the STW20NM60FD?

    The total gate charge (Qg) is 37 nC.

  5. What is the rise time (tr) of the STW20NM60FD?

    The rise time (tr) is 12 ns.

  6. What is the maximum junction temperature (Tj) of the STW20NM60FD?

    The maximum junction temperature (Tj) is 150 °C.

  7. What type of package does the STW20NM60FD come in?

    The STW20NM60FD comes in a TO-247 package.

  8. What are the environmental benefits of the STW20NM60FD's packaging?

    The device is offered in ECOPACK® packages with Lead-free second level interconnects, meeting stringent environmental requirements.

  9. What are some typical applications for the STW20NM60FD?

    The STW20NM60FD is suitable for switching applications, particularly in bridge topologies and ZVS phase-shift converters.

  10. What is the significance of the FDmesh™ technology in the STW20NM60FD?

    The FDmesh™ technology combines reduced on-resistance with fast switching and an intrinsic fast-recovery body diode, enhancing performance in high-frequency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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In Stock

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Same Series
STW20NM60FD
STW20NM60FD
MOSFET N-CH 600V 20A TO247-3
STF20NM60D
STF20NM60D
MOSFET N-CH 600V 20A TO220FP

Similar Products

Part Number STW20NM60FD STW20NM50FD
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1380 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 214W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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