Overview
The STW20NM60FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ family, known for its reduced on-resistance and fast switching capabilities, along with an intrinsic fast-recovery body diode. It is available in the TO-247 package and is designed to meet stringent environmental requirements, including Lead-free second level interconnects in ECOPACK® packages.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (continuous) at TC = 25°C (ID) | 20 | A |
| Drain Current (continuous) at TC = 100°C (ID) | 12.6 | A |
| Drain Current (pulsed) (IDM) | 80 | A |
| Total Dissipation at TC = 25°C (PTOT) | 214 | W |
| Static Drain-Source On-Resistance (RDS(on)) | <0.29 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3-5 | V |
| Total Gate Charge (Qg) | 37 | nC |
| Rise Time (tr) | 12 | ns |
| Output Capacitance (Coss) | 500 | pF |
| Maximum Junction Temperature (Tj) | 150 | °C |
Key Features
- High dv/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
- Intrinsic fast-recovery body diode
- ECOPACK® packages with Lead-free second level interconnects
Applications
The STW20NM60FD is strongly recommended for various switching applications, particularly in bridge topologies and ZVS phase-shift converters due to its fast switching and high dv/dt capabilities.
Q & A
- What is the maximum drain-source voltage of the STW20NM60FD?
The maximum drain-source voltage (VDS) is 600 V.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 20 A.
- What is the typical static drain-source on-resistance (RDS(on))?
The typical static drain-source on-resistance (RDS(on)) is less than 0.29 Ω.
- What is the total gate charge (Qg) of the STW20NM60FD?
The total gate charge (Qg) is 37 nC.
- What is the rise time (tr) of the STW20NM60FD?
The rise time (tr) is 12 ns.
- What is the maximum junction temperature (Tj) of the STW20NM60FD?
The maximum junction temperature (Tj) is 150 °C.
- What type of package does the STW20NM60FD come in?
The STW20NM60FD comes in a TO-247 package.
- What are the environmental benefits of the STW20NM60FD's packaging?
The device is offered in ECOPACK® packages with Lead-free second level interconnects, meeting stringent environmental requirements.
- What are some typical applications for the STW20NM60FD?
The STW20NM60FD is suitable for switching applications, particularly in bridge topologies and ZVS phase-shift converters.
- What is the significance of the FDmesh™ technology in the STW20NM60FD?
The FDmesh™ technology combines reduced on-resistance with fast switching and an intrinsic fast-recovery body diode, enhancing performance in high-frequency applications.
