Overview
The STB20NM60-1 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with STMicroelectronics' proprietary PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The MOSFET is designed to offer superior dynamic performance compared to similar products in the market.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 600 | V |
| VGS (Gate-source voltage) | ±30 | V |
| ID (Drain current, continuous) at TC = 25°C | 20 | A |
| ID (Drain current, continuous) at TC = 100°C | 12.6 | A |
| IDM (Drain current, pulsed) | 80 | A |
| RDS(on) (On-resistance) | < 0.29 | Ω |
| Package | I²PAK | |
| Avalanche Current (IAS) | 10 | A |
| Single Pulse Avalanche Energy (EAS) | 650 | mJ |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Outstanding low on-resistance (RDS(on) < 0.29 Ω)
- Excellent dynamic performance due to proprietary strip technique
Applications
The STB20NM60-1 MOSFET is highly suitable for various switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- High-frequency switching circuits
- Aerospace and industrial power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STB20NM60-1 MOSFET?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20 A.
- What is the on-resistance (RDS(on)) of the STB20NM60-1?
The on-resistance (RDS(on)) is less than 0.29 Ω.
- What are the key features of the MDmesh™ technology used in the STB20NM60-1?
The key features include high dv/dt and avalanche capabilities, 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
- What is the maximum gate-source voltage (VGS) for the STB20NM60-1?
The maximum gate-source voltage (VGS) is ±30 V.
- What is the package type of the STB20NM60-1 MOSFET?
The package type is I²PAK.
- What is the single pulse avalanche energy (EAS) of the STB20NM60-1?
The single pulse avalanche energy (EAS) is 650 mJ.
- What are some typical applications for the STB20NM60-1 MOSFET?
Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
- What is the maximum temperature for soldering the STB20NM60-1?
The maximum temperature for soldering is 300 °C.
- Does the STB20NM60-1 come in ECOPACK® packages?
Yes, the STB20NM60-1 is available in ECOPACK® packages, which are lead-free and comply with JEDEC Standard JESD97.
